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Xbves Is a Regulator of Epithelial Movement during Early Xenopus laevis Development

Proceedings of the National Academy of Sciences - PNAS, 2006-01, Vol.103 (3), p.614-619

2006

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On the Use of a SiGe Spike in the Emitter to Improve the f@@dT@xBV@@dCEO@ Product of High-Speed SiGe HBTs

IEEE electron device letters, 2007-04, Vol.28 (4), p.270-272

2007

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On the Use of a SiGe Spike in the Emitter to Improve the f\hbox Product of High-Speed SiGe HBTs

IEEE electron device letters, 2007-04, Vol.28 (4), p.270-272

2007

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Xbves is required for proper maintenance and movement of epithelial tissue during X. laevis development

FASEB JOURNAL, 2009, Vol.23

2009

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Temperature stable (1-x)NaCa4V5O17-xBaV2O6 microwave dielectric ceramics for ULTCC applications

Ceramics international, 2020-12, Vol.46 (17), p.27579-27583

2020

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Low-loss and low-temperature firable Li2Mg3SnO6-Ba3(VO4)2 microwave dielectric ceramics for LTCC applications

Ceramics international, 2018-02, Vol.44 (2), p.2606-2610

2018

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High-quality factor of (1 − x) Li2Mg3TiO6-xBaV2O6 (x = 0.1, 0.3, 0.4, 0.5, 0.6) ceramics with low sintering temperature

Journal of materials science. Materials in electronics, 2020-06, Vol.31 (11), p.8489-8495

2020

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Microwave dielectric properties of temperature stable (1 − x)Li3Mg2SbO6–xBa3(VO4)2 composite ceramics

Journal of materials science. Materials in electronics, 2018-06, Vol.29 (12), p.9979-9983

2018

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Properties of Boards Prepared from Mixture of Mineral Adducts with Bark and Cone of Calabrian Pine (Pinus brutia)

Journal of Engineering Research and Reports, 2022-04, p.10-18

2022

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On the Convexity of the Heinz Means

Integral equations and operator theory, 2010-12, Vol.68 (4), p.519-527

Kittaneh, Fuad

2010

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A technique for simultaneously improving the product of cutoff frequency-breakdown voltage and thermal stability of SOI SiGe HBT

Chinese physics B, 2016-12, Vol.25 (12), p.308-313

付强张万荣金冬月赵彦晓王肖

2016

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ZnCl2 promoted efficient, one-pot synthesis of 3-arylmethyl and diarylmethyl indoles

Tetrahedron letters, 2014-01, Vol.55 (3), p.694-698

2014

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15-nm base type-II InP/GaAsSb/InP DHBTs with F/sub T/%3D384 GHz and a 6-V BV/sub CEO

IEEE transactions on electron devices, 2006-03, Vol.53 (3), p.559-561

2006

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Design and Simulation of Strained Si/SiGe HBT Architecture with Uniaxially-stressed Collector

2021 International Symposium on Devices, Circuits and Systems (ISDCS), 2021, p.1-4

2021

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Theoretical analysis of XtreMOS™ power transistors

ESSDERC 2007 - 37th European Solid State Device Research Conference, 2007, p.422-425

2007

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The 'Bindunbur' 'bombshell': The true traditional owners of James Price Point and the politics of the anti-gas protest

University of New South Wales law journal, 2019-06, Vol.42 (2), p.597-618

Lily O'Neill

2019

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1-Aminoxymethylcyclopropanecarboxylic acid as building block of β N–O turn and helix: synthesis and conformational analysis in solution and in the solid state

Tetrahedron, 2010-12, Vol.66 (51), p.9733-9737

2010

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FeCl 3 as Lewis acid catalyzed one-pot three-component aza-Friedel–Crafts reactions of indoles, aldehydes, and tertiary aromatic amines

Tetrahedron, 2011, Vol.67 (19), p.3420-3426

2011

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600 GHz InP/GaAsSb/InP DHBTs Grown by MOCVD with a Ga(As,Sb) Graded-Base and fT x BVCEO ≫ 2.5 THz-V at Room Temperature

2007 IEEE International Electron Devices Meeting, 2007, p.667-670

2007

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ESMA guidelines for securities lending: ‘Gaming’ the regulator?

Journal of securities operations & custody, 2013-09, Vol.6 (1), p.6-9

Miller, Alan

2013

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Epidemiología, patogenia, diagnóstico y tratamiento de enfermedad diverticular, 2023

Revista Ocronos, 2023

2023

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Bves function in epithelial movement during development

Ripley, Anna Nesset

2004

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A RF lateral BJT on SOI for realization of RF SOI-BiCMOS technology

Digest of Papers. 2006 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2006, p.4 pp.

2006

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A new sub-micron 24 V SiGe:C resurf HBT

2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs, 2004, p.33-36

2004

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Path integral for second‐derivative Lagrangian L=(κ/2)ẍ2+(m/2)ẋ2+(k/2)x 2−j(τ)x(τ)

Journal of mathematical physics, 1986-12, Vol.27 (12), p.3003-3013

Kleinert, H.

1986

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Xbves Is a Regulator of Epithelial Movement during Early Xenopus laevis Development

On the Use of a SiGe Spike in the Emitter to Improve the f@@dT@xBV@@dCEO@ Product of High-Speed SiGe HBTs

On the Use of a SiGe Spike in the Emitter to Improve the f\hbox Product of High-Speed SiGe HBTs

Xbves is required for proper maintenance and movement of epithelial tissue during X. laevis development

Temperature stable (1-x)NaCa4V5O17-xBaV2O6 microwave dielectric ceramics for ULTCC applications

Low-loss and low-temperature firable Li2Mg3SnO6-Ba3(VO4)2 microwave dielectric ceramics for LTCC applications

High-quality factor of (1 − x) Li2Mg3TiO6-xBaV2O6 (x = 0.1, 0.3, 0.4, 0.5, 0.6) ceramics with low sintering temperature

Microwave dielectric properties of temperature stable (1 − x)Li3Mg2SbO6–xBa3(VO4)2 composite ceramics

Properties of Boards Prepared from Mixture of Mineral Adducts with Bark and Cone of Calabrian Pine (Pinus brutia)

On the Convexity of the Heinz Means

A technique for simultaneously improving the product of cutoff frequency-breakdown voltage and thermal stability of SOI SiGe HBT

ZnCl2 promoted efficient, one-pot synthesis of 3-arylmethyl and diarylmethyl indoles

15-nm base type-II InP/GaAsSb/InP DHBTs with F/sub T/%3D384 GHz and a 6-V BV/sub CEO

Design and Simulation of Strained Si/SiGe HBT Architecture with Uniaxially-stressed Collector

Theoretical analysis of XtreMOS™ power transistors

The 'Bindunbur' 'bombshell': The true traditional owners of James Price Point and the politics of the anti-gas protest

1-Aminoxymethylcyclopropanecarboxylic acid as building block of β N–O turn and helix: synthesis and conformational analysis in solution and in the solid state

FeCl 3 as Lewis acid catalyzed one-pot three-component aza-Friedel–Crafts reactions of indoles, aldehydes, and tertiary aromatic amines

600 GHz InP/GaAsSb/InP DHBTs Grown by MOCVD with a Ga(As,Sb) Graded-Base and fT x BVCEO ≫ 2.5 THz-V at Room Temperature

ESMA guidelines for securities lending: ‘Gaming’ the regulator?

Epidemiología, patogenia, diagnóstico y tratamiento de enfermedad diverticular, 2023

Bves function in epithelial movement during development

A RF lateral BJT on SOI for realization of RF SOI-BiCMOS technology

A new sub-micron 24 V SiGe:C resurf HBT

Path integral for second‐derivative Lagrangian L=(κ/2)ẍ2+(m/2)ẋ2+(k/2)x 2−j(τ)x(τ)

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