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Towards Making SiC ICs Durable and Accessible for Use in the Most Extreme Environments (Including Venus)

Materials science forum, 2020-07, Vol.1004, p.1057-1065

2020

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Operational Testing of 4H-SiC JFET ICs for 60 Days Directly Exposed to Venus Surface Atmospheric Conditions

IEEE journal of the Electron Devices Society, 2019-01, Vol.7, p.100-110

2019

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Demonstration of 4H-SiC Digital Integrated Circuits Above 800 °C

IEEE electron device letters, 2017-08, Vol.38 (8), p.1082-1085

2017

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Prolonged 500 °C Demonstration of 4H-SiC JFET ICs With Two-Level Interconnect

IEEE electron device letters, 2016-05, Vol.37 (5), p.625-628

2016

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Experimental Study on Mitigation of Lifetime-Limiting Dielectric Cracking in Extreme Temperature 4H-SiC JFET Integrated Circuits

Materials science forum, 2020-07, Vol.1004, p.1148-1155

2020

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Stable Electrical Operation of 6H-SiC JFETs and ICs for Thousands of Hours at 500 °C

IEEE electron device letters, 2008-05, Vol.29 (5), p.456-459

2008

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Extreme temperature 6H-SiC JFET integrated circuit technology

Physica status solidi. A, Applications and materials science, 2009-10, Vol.206 (10), p.2329-2345

2009

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Demonstration of 4H-SiC JFET Digital ICs Across 1000°C Temperature Range without Change to Input Voltages

Materials science forum, 2019-07, Vol.963, p.813-817

2019

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The Path Towards Realistic ASIC Electronics Deployment Into Previously Impractical Extreme Application Environments

2022 Device Research Conference (DRC), 2022, p.1-2

2022

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Experimental and Theoretical Study of 4H-SiC JFET Threshold Voltage Body Bias Effect from 25 °C to 500 °C

Materials Science Forum, 2016-05, Vol.858, p.903-907

2016

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Prolonged silicon carbide integrated circuit operation in Venus surface atmospheric conditions

AIP advances, 2016-12, Vol.6 (12), p.125119-125119-7

2016

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Prolonged 500°C Operation of 100+ Transistor Silicon Carbide Integrated Circuits

Materials science forum, 2018-06, Vol.924, p.949-952

2018

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Evidence of Processing Non-Idealities in 4H-SiC Integrated Circuits Fabricated with Two Levels of Metal Interconnect

Materials Science Forum, 2016-05, Vol.858, p.1112-1116

2016

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Processing and Prolonged 500 °C Testing of 4H-SiC JFET Integrated Circuits with Two Levels of Metal Interconnect

Materials Science Forum, 2016-05, Vol.858, p.908-912

2016

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Experimentally observed electrical durability of 4H-SiC JFET ICs operating from 500 °C to 700 °C

2016 European Conference on Silicon Carbide & Related Materials (ECSCRM), 2017-05, Vol.897, p.1-1

2017

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Electrical Characterization of a 4H-SiC JFET Wafer: DC Parameter Variations for Extreme Temperature IC Design

Materials science forum, 2015-06, Vol.821-823, p.781-784

2015

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Study of Defect Structures in 6H-SiC a/m-Plane Pseudofiber Crystals Grown by Hot-Wall CVD Epitaxy

Journal of electronic materials, 2016-04, Vol.45 (4), p.2078-2086

2016

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CVD Growth of 3C-SiC on 4H/6H Mesas

Chemical vapor deposition, 2006-08, Vol.12 (8-9), p.531-540

2006

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Cross-sectional TEM and KOH-Etch Studies of Extended Defects in 3C-SiC p+n Junction Diodes Grown on 4H-SiC Mesas: Groups in Nitrides, SiC and ZnO

Journal of electronic materials, 2008, Vol.37 (5), p.672-680

2008

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High Breakdown Field p-Type 3C-SiC Schottky Diodes Grown on Step-Free 4H-SiC Mesas

Materials science forum, 2004-01, Vol.457-460, p.1061-1064

2004

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Cross-sectional TEM and KOH-Etch Studies of Extended Defects in 3C-SiC p+n Junction Diodes Grown on 4H-SiC Mesas

Journal of electronic materials, 2008-05, Vol.37 (5), p.672-680

2008

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Hydrogen Gas Sensors Fabricated on Atomically Flat 4H-SiC Webbed Cantilevers

Materials science forum, 2009, Vol.600-603, p.1199-1202

2009

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High Temperature Capacitive Pressure Sensor Employing a SiC Based Ring Oscillator

Materials science forum, 2012-01, Vol.717-720, p.1215-1218

2012

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CVD growth of 3C-SiC on 4H/6H mesas: Special issue on silicon carbide CVD for electronic device applications

Chemical vapor deposition, 2006, Vol.12 (8-9), p.531-540

2006

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Measurements of Breakdown Field and Forward Current Stability in 3C-SiC pn Junction Diodes Grown on Step-Free 4H-SiC

Materials science forum, 2006-01, Vol.527-529, p.1335-1338

2006

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Towards Making SiC ICs Durable and Accessible for Use in the Most Extreme Environments (Including Venus)

Operational Testing of 4H-SiC JFET ICs for 60 Days Directly Exposed to Venus Surface Atmospheric Conditions

Demonstration of 4H-SiC Digital Integrated Circuits Above 800 °C

Prolonged 500 °C Demonstration of 4H-SiC JFET ICs With Two-Level Interconnect

Experimental Study on Mitigation of Lifetime-Limiting Dielectric Cracking in Extreme Temperature 4H-SiC JFET Integrated Circuits

Stable Electrical Operation of 6H-SiC JFETs and ICs for Thousands of Hours at 500 °C

Extreme temperature 6H-SiC JFET integrated circuit technology

Demonstration of 4H-SiC JFET Digital ICs Across 1000°C Temperature Range without Change to Input Voltages

The Path Towards Realistic ASIC Electronics Deployment Into Previously Impractical Extreme Application Environments

Experimental and Theoretical Study of 4H-SiC JFET Threshold Voltage Body Bias Effect from 25 °C to 500 °C

Prolonged silicon carbide integrated circuit operation in Venus surface atmospheric conditions

Prolonged 500°C Operation of 100+ Transistor Silicon Carbide Integrated Circuits

Evidence of Processing Non-Idealities in 4H-SiC Integrated Circuits Fabricated with Two Levels of Metal Interconnect

Processing and Prolonged 500 °C Testing of 4H-SiC JFET Integrated Circuits with Two Levels of Metal Interconnect

Experimentally observed electrical durability of 4H-SiC JFET ICs operating from 500 °C to 700 °C

Electrical Characterization of a 4H-SiC JFET Wafer: DC Parameter Variations for Extreme Temperature IC Design

Study of Defect Structures in 6H-SiC a/m-Plane Pseudofiber Crystals Grown by Hot-Wall CVD Epitaxy

CVD Growth of 3C-SiC on 4H/6H Mesas

Cross-sectional TEM and KOH-Etch Studies of Extended Defects in 3C-SiC p+n Junction Diodes Grown on 4H-SiC Mesas: Groups in Nitrides, SiC and ZnO

High Breakdown Field p-Type 3C-SiC Schottky Diodes Grown on Step-Free 4H-SiC Mesas

Cross-sectional TEM and KOH-Etch Studies of Extended Defects in 3C-SiC p+n Junction Diodes Grown on 4H-SiC Mesas

Hydrogen Gas Sensors Fabricated on Atomically Flat 4H-SiC Webbed Cantilevers

High Temperature Capacitive Pressure Sensor Employing a SiC Based Ring Oscillator

CVD growth of 3C-SiC on 4H/6H mesas: Special issue on silicon carbide CVD for electronic device applications

Measurements of Breakdown Field and Forward Current Stability in 3C-SiC pn Junction Diodes Grown on Step-Free 4H-SiC

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