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Performance and Reliability Review of 650 V and 900 V Silicon and SiC Devices: MOSFETs, Cascode JFETs and IGBTs
IEEE transactions on industrial electronics (1982), 2020-09, Vol.67 (9), p.7375-7385, Article 7375
2020
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1.2-kV Vertical GaN Fin-JFETs: High-Temperature Characteristics and Avalanche Capability
IEEE transactions on electron devices, 2021-04, Vol.68 (4), p.2025-2032
2021
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Breakthrough Short Circuit Robustness Demonstrated in Vertical GaN Fin JFET
IEEE transactions on power electronics, 2022-06, Vol.37 (6), p.6253-6258
2022
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Improving SiC JFET Switching Behavior Under Influence of Circuit Parasitics
IEEE transactions on power electronics, 2012-08, Vol.27 (8), p.3843-3854
2012
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Comparison and Reduction of Conducted EMI in SiC JFET and Si IGBT-Based Motor Drives
IEEE transactions on power electronics, 2014-04, Vol.29 (4), p.1757-1767
2014
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Tuning Avalanche Path in Vertical GaN JFETs By Gate Driver Design
IEEE transactions on power electronics, 2022-05, Vol.37 (5), p.5433-5443
2022
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Development of a SiC JFET-Based Six-Pack Power Module for a Fully Integrated Inverter
IEEE transactions on power electronics, 2013-03, Vol.28 (3), p.1464-1478
2013
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Robust Through-Fin Avalanche in Vertical GaN Fin-JFET With Soft Failure Mode
IEEE electron device letters, 2022-03, Vol.43 (3), p.366-369
2022
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A Single-Drive SiC-JFET-SCM for Solid State Circuit Breaker in MVDC Distribution Networks
IEEE transactions on industrial electronics (1982), 2023-11, Vol.70 (11), p.1-11
2023
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Development of Wide-JFET Trench-Etched Double-Diffused MOS (TED-MOS) for High-Voltage Applications
IEEE transactions on electron devices, 2024-04, Vol.71 (4), p.2570
2024
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Dynamic RON Free 1.2-kV Vertical GaN JFET
IEEE transactions on electron devices, 2024-01, Vol.71 (1), p.720-726
2024
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High-Power Modular Multilevel Converters With SiC JFETs
IEEE transactions on power electronics, 2012-01, Vol.27 (1), p.28-36
2012
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A Novel Asymmetric Trench SiC MOSFET With an Integrated JFET for Improved Reverse Conduction Performance
IEEE transactions on electron devices, 2023-11, p.1-7
2023
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Demonstration of the β-Ga₂O₃ MOS-JFETs With Suppressed Gate Leakage Current and Large Gate Swing
IEEE electron device letters, 2023-03, Vol.44 (3), p.380-383
2023
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Static and Dynamic Characteristics of a 1200-V/22-mΩ Normally-Off SiC/GaN Cascode Device Built with Parallel-Connected SiC JFETs Controlled by a Single GaN HEMT
IEEE transactions on power electronics, 2023-10, Vol.38 (10), p.1-10
2023
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Investigation of Conducted EMI in SiC JFET Inverters Using Separated Heat Sinks
IEEE transactions on industrial electronics (1982), 2014-01, Vol.61 (1), p.115-125
2014
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Fabrication of the SiC Gate-All-Around JFET
IEEE transactions on electron devices, 2023-09, Vol.70 (9), p.4612-4617
2023
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A Normally-off Copackaged SiC-JFET/GaN-HEMT Cascode Device for High-Voltage and High-Frequency Applications
IEEE transactions on power electronics, 2020-09, Vol.35 (9), p.9671-9681
2020
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4H-SiC Super-Junction JFET: Design and Experimental Demonstration
IEEE electron device letters, 2020-03, Vol.41 (3), p.445-448
2020
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Performance and Short-Circuit Reliability of SiC MOSFETs With Enhanced JFET Doping Design
IEEE transactions on electron devices, 2023-05, Vol.70 (5), p.1-8
2023
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Demonstration of a GaN-Based Vertical-Channel JFET Fabricated by Selective-Area Regrowth
IEEE transactions on electron devices, 2018-12, Vol.65 (12), p.5329-5336
2018
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Dv/Dt-Control of 1200-V Normally-off SiC-JFET/GaN-HEMT Cascode Device
IEEE transactions on power electronics, 2021-03, Vol.36 (3), p.3312-3322
2021
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Novel Enhance-Mode AlGaN/GaN JFET With BV of Over 1.2 kV Maintaining Low RON,sp
IEEE transactions on electron devices, 2022-03, Vol.69 (3), p.1200-1205
2022
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Simulation of High Temperature Performance and Electronic Noise of SiC-JFET for Charge Sensitive Preamplifier
IEEE transactions on nuclear science, 2023-11, Vol.70 (11), p.1-1
2023
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A Novel SiC MOSFET With Embedded Auto-Adjust JFET With Improved Short Circuit Performance
IEEE electron device letters, 2021-12, Vol.42 (12), p.1751-1754
2021
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