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Single-Pulse Avalanche Mode Robustness of Commercial 1200 V/80 mΩ SiC MOSFETs
IEEE transactions on power electronics, 2017-08, Vol.32 (8), p.6405-6415
2017
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Output Capacitance Loss of GaN HEMTs in Steady-State Switching
IEEE transactions on power electronics, 2023, p.1-10
2023
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Single Pulse Unclamped-Inductive-Switching Induced Failure and Analysis for 650 V p-GaN HEMT
IEEE transactions on power electronics, 2020-11, Vol.35 (11), p.11328-11331
2020
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Investigation of safe operating area and behavior of unclamped inductive switching on 4H-SiC VDMOSFET
Microelectronics and reliability, 2024-04, Vol.155, Article 115347
2024
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Improvements to the Analytical Model to Describe UIS Events
IEEE transactions on electron devices, 2022-07, Vol.69 (7), p.3848-3853
2022
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A Temperature-Dependent SPICE Model of SiC Power MOSFETs for Within and Out-of-SOA Simulations
IEEE transactions on power electronics, 2018-09, Vol.33 (9), p.8020-8029
2018
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Unclamped Inductive Switching Robustness of SiC Devices With Parallel-Connected Varistor
IEEE transactions on electron devices, 2022-10, Vol.69 (10), p.5671-5677
2022
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A Deep Insight Into the Degradation of 1.2-kV 4H-SiC mosfets Under Repetitive Unclamped Inductive Switching Stresses
IEEE transactions on power electronics, 2018-06, Vol.33 (6), p.5251-5261
2018
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Analysis of Energy Loss in GaN E-Mode Devices Under UIS Stresses
IEEE transactions on power electronics, 2022-06, Vol.37 (6), p.6711-6719
2022
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Investigation and Failure Mode of Asymmetric and Double Trench SiC mosfets Under Avalanche Conditions
IEEE transactions on power electronics, 2020-08, Vol.35 (8), p.8524-8531
2020
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Investigation on Single Pulse Avalanche Failure of 1200-V SiC MOSFETs via Optimized Thermoelectric Simulation
IEEE transactions on electron devices, 2021-03, Vol.68 (3), p.1168-1175
2021
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New Failure Mechanism Induced by Current Limit for Superjunction MOSFET Under Single-Pulse UIS Stress
IEEE transactions on electron devices, 2021-07, Vol.68 (7), p.3483-3489
2021
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Avalanche ruggedness and failure mode of SiC trench MOSFETs
Microelectronics and reliability, 2023-11, Vol.150, p.115196, Article 115196
2023
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Repetitive Unclamped-Inductive-Switching-Induced Electrical Parameters Degradations and Simulation Optimizations for 4H-SiC MOSFETs
IEEE transactions on electron devices, 2016-11, Vol.63 (11), p.4331-4338, Article 4331
2016
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Study on failure mechanism caused by voltage leap of SGT-MOSFET during UIS testing
Microelectronics and reliability, 2022-12, Vol.139, p.114822, Article 114822
2022
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Investigation on the Degradations of Parallel-Connected 4H-SiC MOSFETs Under Repetitive UIS Stresses
IEEE transactions on electron devices, 2022-02, Vol.69 (2), p.650-657
2022
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On the Abnormal Reduction and Recovery of Dynamic RON Under UIS Stress in Schottky p-GaN Gate HEMTs
IEEE transactions on power electronics, 2023-08, Vol.38 (8), p.9347-9350
2023
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Evaluation of SiC-MOSFET by Repetitive UIS Tests for Solid State Circuit Breaker
Materials science forum, 2020-07, Vol.1004, p.1010-1015
2020
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A Deep Insight Into the Impact of Bipolar Degradations on Avalanche Robustness of 4H-SiC MOSFETs
IEEE transactions on electron devices, 2023-07, Vol.70 (7), p.3726-3734
2023
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The Trench Power MOSFET-Part II: Application Specific VDMOS, LDMOS, Packaging, and Reliability
IEEE transactions on electron devices, 2017-03, Vol.64 (3), p.692-712
2017
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Characterization and Analysis on Performance and Avalanche Reliability of SiC MOSFETs With Varied JFET Region Width
IEEE transactions on electron devices, 2021-08, Vol.68 (8), p.3982-3990
2021
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Improved Electrothermal Ruggedness in SiC MOSFETs Compared With Silicon IGBTs
IEEE transactions on electron devices, 2014-07, Vol.61 (7), p.2278-2286
2014
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Avalanche current balancing using parallel connection of SiC-MOSFET/SiC-JFETs with cascode connection
Microelectronics and reliability, 2021-11, Vol.126, p.114237, Article 114237
2021
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Complete Avalanche Process and Failure Mechanism of Trench-Gate FS-IGBT Under Unclamped Inductive Switching by Using Infrared Visualization Method
IEEE transactions on electron devices, 2020-09, Vol.67 (9), p.3908-3911
2020
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Investigation of Robustness Capability of −730 V P-Channel Vertical SiC Power MOSFET for Complementary Inverter Applications
IEEE transactions on electron devices, 2017-10, Vol.64 (10), p.4219-4225
2017
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