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Short-Circuit Characteristics and High-Current Induced Oscillations in a 1200-V/80-mΩ Normally-Off SiC/GaN Cascode Device
IEEE transactions on industrial electronics (1982), 2022-12, Vol.69 (12), p.12773-12783
2022
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Analysis and Modeling of SiC JFET Bi-Directional Switches Parasitic Oscillation
IEEE transactions on power electronics, 2019-09, Vol.34 (9), p.8613-8625
2019
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Comparison and Reduction of Conducted EMI in SiC JFET and Si IGBT-Based Motor Drives
IEEE transactions on power electronics, 2014-04, Vol.29 (4), p.1757-1767
2014
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A Normally-off Copackaged SiC-JFET/GaN-HEMT Cascode Device for High-Voltage and High-Frequency Applications
IEEE transactions on power electronics, 2020-09, Vol.35 (9), p.9671-9681
2020
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Impact of Drain Leakage Current on Short Circuit Behavior of GaN/SiC Cascode Devices
IEEE transactions on power electronics, 2021-11, Vol.36 (11), p.12158-12162
2021
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A High-Performance 4H-SiC JFET With Reverse Recovery Capability and Low Switching Loss
IEEE transactions on electron devices, 2021-10, Vol.68 (10), p.5022-5028
2021
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Latching Current Limiter for Space Platform Power Distribution Using a Low-Voltage p-MOSFET and a Normally-ON SiC JFET
IEEE journal of emerging and selected topics in power electronics, 2022-10, Vol.10 (5), p.5464-5473
2022
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Static and Dynamic Characteristics of a 1200-V/22-mΩ Normally-Off SiC/GaN Cascode Device Built with Parallel-Connected SiC JFETs Controlled by a Single GaN HEMT
IEEE transactions on power electronics, 2023-10, Vol.38 (10), p.1-10
2023
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Self-Powered Gate Driver for Normally ON Silicon Carbide Junction Field-Effect Transistors Without External Power Supply
IEEE transactions on power electronics, 2013-03, Vol.28 (3), p.1488-1501
2013
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A Comparative Study of SiC JFET Super-Cascode Topologies
2021 IEEE Energy Conversion Congress and Exposition (ECCE), 2021, p.1741-1748
2021
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A Novel Asymmetric Trench SiC MOSFET With an Integrated JFET for Improved Reverse Conduction Performance
IEEE transactions on electron devices, 2023-11, p.1-7
2023
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Development of a SiC JFET-Based Six-Pack Power Module for a Fully Integrated Inverter
IEEE transactions on power electronics, 2013-03, Vol.28 (3), p.1464-1478
2013
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Experimental Study on Short-Channel Effects in Double-Gate Silicon Carbide JFETs
IEEE transactions on electron devices, 2020-10, Vol.67 (10), p.4538-4540
2020
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Challenges Regarding Parallel Connection of SiC JFETs
IEEE transactions on power electronics, 2013-03, Vol.28 (3), p.1449-1463
2013
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An Experimental Evaluation of SiC Switches in Soft-Switching Converters
IEEE transactions on power electronics, 2014-05, Vol.29 (5), p.2527-2538
2014
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A Physics-Based Model for a SiC JFET Accounting for Electric-Field-Dependent Mobility
IEEE transactions on industry applications, 2011-01, Vol.47 (1), p.199-211
2011
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Boost Converter With SiC JFETs: Comparison With CoolMOS and Tests at Elevated Case Temperature
IEEE transactions on power electronics, 2013-04, Vol.28 (4), p.1938-1945
2013
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Analysis and Experimental Verification of the Influence of Fabrication Process Tolerances and Circuit Parasitics on Transient Current Sharing of Parallel-Connected SiC JFETs
IEEE transactions on power electronics, 2014-05, Vol.29 (5), p.2180-2191
2014
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Effect of Neutron Irradiation on High Voltage 4H-SiC Vertical JFET Characteristics: Characterization and Modeling
IEEE transactions on nuclear science, 2014-12, Vol.61 (6), p.3030-3036
2014
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4H-SiC N-Channel JFET for Operation in High-Temperature Environments
IEEE journal of the Electron Devices Society, 2014-11, Vol.2 (6), p.164-167
2014
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Evaluation of SiC JFET Performance During Repetitive Pulsed Switching Into an Unclamped Inductive Load
IEEE transactions on plasma science, 2014-10, Vol.42 (10), p.2968-2973
2014
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A 200 °C Safety System at Power-Up of Normally On SiC JFETs Inverters
IEEE transactions on power electronics, 2014-05, Vol.29 (5), p.2338-2344
2014
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Comparison of thermal stress during short-circuit in different types of 1.2 kV SiC transistors based on experiments and simulations
2016 European Conference on Silicon Carbide & Related Materials (ECSCRM), 2017, Vol.897, p.1-1
2017
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High Temperature Unclamped Inductive Switching Mode Evaluation of SiC JFET
IEEE electron device letters, 2013-04, Vol.34 (4), p.526-528
2013
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Development of 4H-SiC LJFET-Based Power IC
IEEE transactions on electron devices, 2008-08, Vol.55 (8), p.1934-1945
2008
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