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Reliable low‐power high‐performance low‐temperature polycrystalline thin‐film transistor technologies in bottom gate‐controlled device architectures for AMOLED displays

Journal of the Society for Information Display, 2023-05, Vol.31 (5), p.298-307

2023

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Impact of different localized trap charge profiles on the short channel double gate junctionless nanowire transistor based inverter and Ring Oscillator circuit

International journal of electronics and communications, 2019-08, Vol.108, p.251-261

2019

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A Charge-Plasma-Based Dielectric-Modulated Junctionless TFET for Biosensor Label-Free Detection

IEEE transactions on electron devices, 2017-01, Vol.64 (1), p.271-278

2017

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Short-Channel Effects in Tunnel FETs

IEEE transactions on electron devices, 2015-09, Vol.62 (9), p.3019-3024

2015

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Asymmetric Drain Extension Dual-kk Trigate Underlap FinFET Based on RF/Analog Circuit

Micromachines (Basel), 2017-11, Vol.8 (11), p.330

2017

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300-GHz InAlN/GaN HEMTs With InGaN Back Barrier

IEEE electron device letters, 2011-11, Vol.32 (11), p.1525-1527

2011

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Ultrathin Body and Buried Oxide SOI MOSFETs With Non-LDD Source/Drain Extensions: A Simulation Study

IEEE transactions on electron devices, 2024-01, Vol.71 (1), p.412-417

2024

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Comprehensive Analysis of Gate-Induced Drain Leakage in Vertically Stacked Nanowire FETs: Inversion-Mode Versus Junctionless Mode

IEEE electron device letters, 2016-05, Vol.37 (5), p.541-544

2016

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Impact of auxiliary gate work function on boosting electrical performance of a gate-all-around field effect transistor with emphasis on the scaling behavior

The Journal of physics and chemistry of solids, 2021-09, Vol.156, p.110134, Article 110134

2021

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Improved Switching Speed of a CMOS Inverter Using Work-Function Modulation Engineering

IEEE transactions on electron devices, 2018-06, Vol.65 (6), p.2422-2429

2018

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Improvement in Short-Channel Effects of the Thin-Film Transistors Using Atomic-Layer Deposited In-Ga-Sn-O Channels With Various Channel Compositions

IEEE transactions on electron devices, 2022-10, Vol.69 (10), p.5542-5548

2022

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A Model for Gate-Underlap-Dependent Short- Channel Effects in Junctionless MOSFET

IEEE transactions on electron devices, 2018-03, Vol.65 (3), p.881-887

2018

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Advanced Short-Channel-Effect Modeling With Applicability to Device Optimization-Potentials and Scaling

IEEE transactions on electron devices, 2019-09, Vol.66 (9), p.3726-3733

2019

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Suppression of the Short-Channel Effect in Dehydrogenated Elevated-Metal Metal- Oxide (EMMO) Thin-Film Transistors

IEEE transactions on electron devices, 2020-07, Vol.67 (7), p.3001-3004

2020

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Short-Channel Effects in SiC MOSFETs Based on Analyses of Saturation Drain Current

IEEE transactions on electron devices, 2021-03, Vol.68 (3), p.1382-1384

2021

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Electrical Properties of Double-Gate Field-Effect Transistor Based on MA } N } (M = Ti, Zr, and Hf; A = Si, Ge, and Sn) Monolayers

IEEE transactions on electron devices, 2023-08, p.1-6

2023

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Estimation of Threshold Voltage in SiC Short-Channel MOSFETs

IEEE transactions on electron devices, 2018-07, Vol.65 (7), p.3077-3080

2018

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Modeling of Short-Channel Effects in DG MOSFETs: Green's Function Method Versus Scale Length Model

IEEE transactions on electron devices, 2018-08, Vol.65 (8), p.3112-3119

2018

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Cryogenic Temperature and Doping Analysis of Source-to-Drain Tunneling Current in Ultrashort-Channel Nanosheet MOSFETs

IEEE transactions on electron devices, 2022-03, Vol.69 (3), p.1588-1595

2022

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Threshold voltage modeling based comparative performance exploration of Junctionless and Junction-Based High-K gate stack Dual-Material Cylindrical Gate-All-Around Macaroni MOSFET

Materials science & engineering. B, Solid-state materials for advanced technology, 2024-05, Vol.303, Article 117332

2024

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Quasi-Compact Model of Direct Source-to-Drain Tunneling Current in Ultrashort-Channel Nanosheet MOSFETs by Wavelet Transform

IEEE transactions on electron devices, 2022-01, Vol.69 (1), p.17-24

2022

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Experimental Study on Short-Channel Effects in Double-Gate Silicon Carbide JFETs

IEEE transactions on electron devices, 2020-10, Vol.67 (10), p.4538-4540

2020

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Scaling of Nanowire Transistors

IEEE transactions on electron devices, 2008-11, Vol.55 (11), p.2846-2858

2008

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Interfacial trap charge and self-heating effect based reliability analysis of a Dual-Drain Vertical Tunnel FET

Microelectronics and reliability, 2023-07, Vol.146, p.115024, Article 115024

2023

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An Above Threshold Model for Short-Channel DG MOSFETs

IEEE transactions on electron devices, 2021-08, Vol.68 (8), p.3734-3739

2021

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Reliable low‐power high‐performance low‐temperature polycrystalline thin‐film transistor technologies in bottom gate‐controlled device architectures for AMOLED displays

Impact of different localized trap charge profiles on the short channel double gate junctionless nanowire transistor based inverter and Ring Oscillator circuit

A Charge-Plasma-Based Dielectric-Modulated Junctionless TFET for Biosensor Label-Free Detection

Short-Channel Effects in Tunnel FETs

Asymmetric Drain Extension Dual-kk Trigate Underlap FinFET Based on RF/Analog Circuit

300-GHz InAlN/GaN HEMTs With InGaN Back Barrier

Ultrathin Body and Buried Oxide SOI MOSFETs With Non-LDD Source/Drain Extensions: A Simulation Study

Comprehensive Analysis of Gate-Induced Drain Leakage in Vertically Stacked Nanowire FETs: Inversion-Mode Versus Junctionless Mode

Impact of auxiliary gate work function on boosting electrical performance of a gate-all-around field effect transistor with emphasis on the scaling behavior

Improved Switching Speed of a CMOS Inverter Using Work-Function Modulation Engineering

Improvement in Short-Channel Effects of the Thin-Film Transistors Using Atomic-Layer Deposited In-Ga-Sn-O Channels With Various Channel Compositions

A Model for Gate-Underlap-Dependent Short- Channel Effects in Junctionless MOSFET

Advanced Short-Channel-Effect Modeling With Applicability to Device Optimization-Potentials and Scaling

Suppression of the Short-Channel Effect in Dehydrogenated Elevated-Metal Metal- Oxide (EMMO) Thin-Film Transistors

Short-Channel Effects in SiC MOSFETs Based on Analyses of Saturation Drain Current

Electrical Properties of Double-Gate Field-Effect Transistor Based on MA } N } (M = Ti, Zr, and Hf; A = Si, Ge, and Sn) Monolayers

Estimation of Threshold Voltage in SiC Short-Channel MOSFETs

Modeling of Short-Channel Effects in DG MOSFETs: Green's Function Method Versus Scale Length Model

Cryogenic Temperature and Doping Analysis of Source-to-Drain Tunneling Current in Ultrashort-Channel Nanosheet MOSFETs

Threshold voltage modeling based comparative performance exploration of Junctionless and Junction-Based High-K gate stack Dual-Material Cylindrical Gate-All-Around Macaroni MOSFET

Quasi-Compact Model of Direct Source-to-Drain Tunneling Current in Ultrashort-Channel Nanosheet MOSFETs by Wavelet Transform

Experimental Study on Short-Channel Effects in Double-Gate Silicon Carbide JFETs

Scaling of Nanowire Transistors

Interfacial trap charge and self-heating effect based reliability analysis of a Dual-Drain Vertical Tunnel FET

An Above Threshold Model for Short-Channel DG MOSFETs

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