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Static and Dynamic Characteristics of a 1200-V/22-mΩ Normally-Off SiC/GaN Cascode Device Built with Parallel-Connected SiC JFETs Controlled by a Single GaN HEMT

IEEE transactions on power electronics, 2023-10, Vol.38 (10), p.1-10

2023

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Cascaded SiC JFET Topology for High-Voltage Solid-State Circuit Breaker Applications

IEEE transactions on industry applications, 2023-03, Vol.59 (2), p.1-14

2023

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Normally-Off Diamond Junction Field-Effect Transistors With Submicrometer Channel

IEEE electron device letters, 2016-02, Vol.37 (2), p.209-211

2016

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Short-Circuit Protection Circuits for Silicon-Carbide Power Transistors

IEEE transactions on industrial electronics (1982), 2016-04, Vol.63 (4), p.1995-2004

2016

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Forced Current Balancing of Parallel-Connected SiC JFETs During Forward and Reverse Conduction Mode

IEEE transactions on power electronics, 2017-02, Vol.32 (2), p.1400-1410

2017

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JFETIDG: A Compact Model for Independent Dual-Gate JFETs With Junction or MOS Gates

IEEE transactions on electron devices, 2018-02, Vol.65 (2), p.747-755

2018

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Short-Circuit Failure Mechanisms of 650-V GaN/SiC Cascode Devices in Comparison With SiC MOSFETs

IEEE transactions on industrial electronics (1982), 2022-07, Vol.69 (7), p.7340-7348

2022

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Design and Evaluation of Reduced Self-Capacitance Inductor in DC/DC Converters with Fast-Switching SiC Transistors

IEEE transactions on power electronics, 2014-05, Vol.29 (5), p.2492-2499

2014

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Low-Noise Si-JFETs Enhanced by Split-Channel Concept

IEEE transactions on electron devices, 2020-11, Vol.67 (11), p.4789-4793

2020

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Volltext

Comparison of Thermal Stress During Short-Circuit in Different Types of 1.2-kV SiC Transistors Based on Experiments and Simulations

IEEE transactions on industrial electronics (1982), 2021-03, Vol.68 (3), p.2608-2616

2021

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A Novel Asymmetric Trench SiC MOSFET With an Integrated JFET for Improved Reverse Conduction Performance

IEEE transactions on electron devices, 2023-11, p.1-7

2023

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SPICE Compact BJT, MOSFET, and JFET Models for ICs Simulation in the Wide Temperature Range (From −200 °C to +300 °C)

IEEE transactions on computer-aided design of integrated circuits and systems, 2021-04, Vol.40 (4), p.708-722

2021

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A Backside-Illuminated 3.5 μm Pixel With 86% Demodulation Contrast at 1.0 V Voltage Swing for Indirect Time-of-Flight Image Sensors

IEEE transactions on electron devices, 2023-09, Vol.70 (9), p.4712-4718

2023

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High-Temperature Operation of Diamond Junction Field-Effect Transistors With Lateral p-n Junctions

IEEE electron device letters, 2013-09, Vol.34 (9), p.1175-1177

2013

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Short-Circuit Characteristics and High-Current Induced Oscillations in a 1200-V/80-mΩ Normally-Off SiC/GaN Cascode Device

IEEE transactions on industrial electronics (1982), 2022-12, Vol.69 (12), p.12773-12783

2022

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Volltext

GaN Vertical-Channel Junction Field-Effect Transistors With Regrown p-GaN by MOCVD

IEEE transactions on electron devices, 2020-10, Vol.67 (10), p.3972-3977

2020

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Volltext

Comparison and Reduction of Conducted EMI in SiC JFET and Si IGBT-Based Motor Drives

IEEE transactions on power electronics, 2014-04, Vol.29 (4), p.1757-1767

2014

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Volltext

3-D Simulation Study of a Normally-OFF GaN Lateral Multi-Channel JFET With Optimized Electrical Field Transfer Terminal Structure

IEEE transactions on electron devices, 2022-04, Vol.69 (4), p.1918-1923

2022

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A Bootstrap Diode Emulator Integration to 600 V N-Type Epitaxial Platform for High Voltage Gate Driver IC

IEEE electron device letters, 2022-11, Vol.43 (11), p.1941-1944

2022

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A High-Performance 4H-SiC JFET With Reverse Recovery Capability and Low Switching Loss

IEEE transactions on electron devices, 2021-10, Vol.68 (10), p.5022-5028

2021

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Volltext

Stable Electrical Operation of 6H-SiC JFETs and ICs for Thousands of Hours at 500 °C

IEEE electron device letters, 2008-05, Vol.29 (5), p.456-459

2008

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Simulation of High Temperature Performance and Electronic Noise of SiC-JFET for Charge Sensitive Preamplifier

IEEE transactions on nuclear science, 2023-11, Vol.70 (11), p.1-1

2023

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Volltext

Self-Powered Gate Driver for Normally ON Silicon Carbide Junction Field-Effect Transistors Without External Power Supply

IEEE transactions on power electronics, 2013-03, Vol.28 (3), p.1488-1501

2013

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Volltext

Full-Swing, High-Gain Inverters Based on ZnSnO JFETs and MESFETs

IEEE transactions on electron devices, 2019-08, Vol.66 (8), p.3376-3381

2019

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Volltext

Dynamic Voltage Balancing for the High-Voltage SiC Super-Cascode Power Switch

IEEE journal of emerging and selected topics in power electronics, 2019-09, Vol.7 (3), p.1566-1573

2019

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Static and Dynamic Characteristics of a 1200-V/22-mΩ Normally-Off SiC/GaN Cascode Device Built with Parallel-Connected SiC JFETs Controlled by a Single GaN HEMT

Cascaded SiC JFET Topology for High-Voltage Solid-State Circuit Breaker Applications

Normally-Off Diamond Junction Field-Effect Transistors With Submicrometer Channel

Short-Circuit Protection Circuits for Silicon-Carbide Power Transistors

Forced Current Balancing of Parallel-Connected SiC JFETs During Forward and Reverse Conduction Mode

JFETIDG: A Compact Model for Independent Dual-Gate JFETs With Junction or MOS Gates

Short-Circuit Failure Mechanisms of 650-V GaN/SiC Cascode Devices in Comparison With SiC MOSFETs

Design and Evaluation of Reduced Self-Capacitance Inductor in DC/DC Converters with Fast-Switching SiC Transistors

Low-Noise Si-JFETs Enhanced by Split-Channel Concept

Comparison of Thermal Stress During Short-Circuit in Different Types of 1.2-kV SiC Transistors Based on Experiments and Simulations

A Novel Asymmetric Trench SiC MOSFET With an Integrated JFET for Improved Reverse Conduction Performance

SPICE Compact BJT, MOSFET, and JFET Models for ICs Simulation in the Wide Temperature Range (From −200 °C to +300 °C)

A Backside-Illuminated 3.5 μm Pixel With 86% Demodulation Contrast at 1.0 V Voltage Swing for Indirect Time-of-Flight Image Sensors

High-Temperature Operation of Diamond Junction Field-Effect Transistors With Lateral p-n Junctions

Short-Circuit Characteristics and High-Current Induced Oscillations in a 1200-V/80-mΩ Normally-Off SiC/GaN Cascode Device

GaN Vertical-Channel Junction Field-Effect Transistors With Regrown p-GaN by MOCVD

Comparison and Reduction of Conducted EMI in SiC JFET and Si IGBT-Based Motor Drives

3-D Simulation Study of a Normally-OFF GaN Lateral Multi-Channel JFET With Optimized Electrical Field Transfer Terminal Structure

A Bootstrap Diode Emulator Integration to 600 V N-Type Epitaxial Platform for High Voltage Gate Driver IC

A High-Performance 4H-SiC JFET With Reverse Recovery Capability and Low Switching Loss

Stable Electrical Operation of 6H-SiC JFETs and ICs for Thousands of Hours at 500 °C

Simulation of High Temperature Performance and Electronic Noise of SiC-JFET for Charge Sensitive Preamplifier

Self-Powered Gate Driver for Normally ON Silicon Carbide Junction Field-Effect Transistors Without External Power Supply

Full-Swing, High-Gain Inverters Based on ZnSnO JFETs and MESFETs

Dynamic Voltage Balancing for the High-Voltage SiC Super-Cascode Power Switch

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