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Short-Circuit Protection Circuits for Silicon-Carbide Power Transistors

IEEE transactions on industrial electronics (1982), 2016-04, Vol.63 (4), p.1995-2004

2016

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Short-Circuit Failure Mechanisms of 650-V GaN/SiC Cascode Devices in Comparison With SiC MOSFETs

IEEE transactions on industrial electronics (1982), 2022-07, Vol.69 (7), p.7340-7348

2022

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Low-Noise Si-JFETs Enhanced by Split-Channel Concept

IEEE transactions on electron devices, 2020-11, Vol.67 (11), p.4789-4793

2020

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Comparison of Thermal Stress During Short-Circuit in Different Types of 1.2-kV SiC Transistors Based on Experiments and Simulations

IEEE transactions on industrial electronics (1982), 2021-03, Vol.68 (3), p.2608-2616

2021

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Volltext

GaN Vertical-Channel Junction Field-Effect Transistors With Regrown p-GaN by MOCVD

IEEE transactions on electron devices, 2020-10, Vol.67 (10), p.3972-3977

2020

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A Backside-Illuminated 3.5 μm Pixel With 86% Demodulation Contrast at 1.0 V Voltage Swing for Indirect Time-of-Flight Image Sensors

IEEE transactions on electron devices, 2023-09, Vol.70 (9), p.4712-4718

2023

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A Novel Asymmetric Trench SiC MOSFET With an Integrated JFET for Improved Reverse Conduction Performance

IEEE transactions on electron devices, 2023-11, p.1-7

2023

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Short-Circuit Characteristics and High-Current Induced Oscillations in a 1200-V/80-mΩ Normally-Off SiC/GaN Cascode Device

IEEE transactions on industrial electronics (1982), 2022-12, Vol.69 (12), p.12773-12783

2022

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Volltext

3-D Simulation Study of a Normally-OFF GaN Lateral Multi-Channel JFET With Optimized Electrical Field Transfer Terminal Structure

IEEE transactions on electron devices, 2022-04, Vol.69 (4), p.1918-1923

2022

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Cascaded SiC JFET Topology for High-Voltage Solid-State Circuit Breaker Applications

IEEE transactions on industry applications, 2023-03, Vol.59 (2), p.1-14

2023

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Volltext

Comparison and Reduction of Conducted EMI in SiC JFET and Si IGBT-Based Motor Drives

IEEE transactions on power electronics, 2014-04, Vol.29 (4), p.1757-1767

2014

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Volltext

Simulation of High Temperature Performance and Electronic Noise of SiC-JFET for Charge Sensitive Preamplifier

IEEE transactions on nuclear science, 2023-11, Vol.70 (11), p.1-1

2023

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Volltext

A Bootstrap Diode Emulator Integration to 600 V N-Type Epitaxial Platform for High Voltage Gate Driver IC

IEEE electron device letters, 2022-11, Vol.43 (11), p.1941-1944

2022

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A High-Performance 4H-SiC JFET With Reverse Recovery Capability and Low Switching Loss

IEEE transactions on electron devices, 2021-10, Vol.68 (10), p.5022-5028

2021

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Volltext

Static and Dynamic Characteristics of a 1200-V/22-mΩ Normally-Off SiC/GaN Cascode Device Built with Parallel-Connected SiC JFETs Controlled by a Single GaN HEMT

IEEE transactions on power electronics, 2023-10, Vol.38 (10), p.1-10

2023

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Breakthrough Short Circuit Robustness Demonstrated in Vertical GaN Fin JFET

IEEE transactions on power electronics, 2022-06, Vol.37 (6), p.6253-6258

2022

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Full-Swing, High-Gain Inverters Based on ZnSnO JFETs and MESFETs

IEEE transactions on electron devices, 2019-08, Vol.66 (8), p.3376-3381

2019

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Normally-Off Diamond Junction Field-Effect Transistors With Submicrometer Channel

IEEE electron device letters, 2016-02, Vol.37 (2), p.209-211

2016

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Three-Terminal Si/SiC Hybrid Switch

IEEE transactions on power electronics, 2020-09, Vol.35 (9), p.8867-8871

2020

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Volltext

True Material Limit of Power Devices-Applied to 2-D Superjunction MOSFET

IEEE transactions on electron devices, 2018-04, Vol.65 (4), p.1432-1439

2018

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Volltext

Impact of Drain Leakage Current on Short Circuit Behavior of GaN/SiC Cascode Devices

IEEE transactions on power electronics, 2021-11, Vol.36 (11), p.12158-12162

2021

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Volltext

A Normally-off Copackaged SiC-JFET/GaN-HEMT Cascode Device for High-Voltage and High-Frequency Applications

IEEE transactions on power electronics, 2020-09, Vol.35 (9), p.9671-9681

2020

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Design and performance analysis of GaN vertical JFETs with ion-implanted gates

Semiconductor science and technology, 2022-12, Vol.37 (12), p.125011

2022

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Charge-based Model for Junction FETs

IEEE transactions on electron devices, 2018-07, Vol.65 (7), p.2694-2698

2018

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Forced Current Balancing of Parallel-Connected SiC JFETs During Forward and Reverse Conduction Mode

IEEE transactions on power electronics, 2017-02, Vol.32 (2), p.1400-1410

2017

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Short-Circuit Protection Circuits for Silicon-Carbide Power Transistors

Short-Circuit Failure Mechanisms of 650-V GaN/SiC Cascode Devices in Comparison With SiC MOSFETs

Low-Noise Si-JFETs Enhanced by Split-Channel Concept

Comparison of Thermal Stress During Short-Circuit in Different Types of 1.2-kV SiC Transistors Based on Experiments and Simulations

GaN Vertical-Channel Junction Field-Effect Transistors With Regrown p-GaN by MOCVD

A Backside-Illuminated 3.5 μm Pixel With 86% Demodulation Contrast at 1.0 V Voltage Swing for Indirect Time-of-Flight Image Sensors

A Novel Asymmetric Trench SiC MOSFET With an Integrated JFET for Improved Reverse Conduction Performance

Short-Circuit Characteristics and High-Current Induced Oscillations in a 1200-V/80-mΩ Normally-Off SiC/GaN Cascode Device

3-D Simulation Study of a Normally-OFF GaN Lateral Multi-Channel JFET With Optimized Electrical Field Transfer Terminal Structure

Cascaded SiC JFET Topology for High-Voltage Solid-State Circuit Breaker Applications

Comparison and Reduction of Conducted EMI in SiC JFET and Si IGBT-Based Motor Drives

Simulation of High Temperature Performance and Electronic Noise of SiC-JFET for Charge Sensitive Preamplifier

A Bootstrap Diode Emulator Integration to 600 V N-Type Epitaxial Platform for High Voltage Gate Driver IC

A High-Performance 4H-SiC JFET With Reverse Recovery Capability and Low Switching Loss

Static and Dynamic Characteristics of a 1200-V/22-mΩ Normally-Off SiC/GaN Cascode Device Built with Parallel-Connected SiC JFETs Controlled by a Single GaN HEMT

Breakthrough Short Circuit Robustness Demonstrated in Vertical GaN Fin JFET

Full-Swing, High-Gain Inverters Based on ZnSnO JFETs and MESFETs

Normally-Off Diamond Junction Field-Effect Transistors With Submicrometer Channel

Three-Terminal Si/SiC Hybrid Switch

True Material Limit of Power Devices-Applied to 2-D Superjunction MOSFET

Impact of Drain Leakage Current on Short Circuit Behavior of GaN/SiC Cascode Devices

A Normally-off Copackaged SiC-JFET/GaN-HEMT Cascode Device for High-Voltage and High-Frequency Applications

Design and performance analysis of GaN vertical JFETs with ion-implanted gates

Charge-based Model for Junction FETs

Forced Current Balancing of Parallel-Connected SiC JFETs During Forward and Reverse Conduction Mode

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