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A 28-GHz Low-Power Phased-Array Receiver Front-End With 360° RTPS Phase Shift Range

IEEE transactions on microwave theory and techniques, 2017-11, Vol.65 (11), p.4703-4714

2017

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Comparative Study of SiC Planar MOSFETs With Different p-Body Designs

IEEE transactions on electron devices, 2020-03, Vol.67 (3), p.1071-1076

2020

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Volltext

A Predictive Algorithm for Crosstalk Peaks of SiC MOSFET by Considering the Nonlinearity of Gate-Drain Capacitance

IEEE transactions on power electronics, 2021-03, Vol.36 (3), p.2823-2834

2021

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Volltext

A High-Performance 4H-SiC JFET With Reverse Recovery Capability and Low Switching Loss

IEEE transactions on electron devices, 2021-10, Vol.68 (10), p.5022-5028

2021

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Volltext

A Split Triple-Gate Power LDMOS With Improved Static-State and Switching Performance

IEEE transactions on electron devices, 2019-06, Vol.66 (6), p.2669-2674

2019

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Volltext

Generalized Design Considerations and Analysis of Class-E Amplifier for Sinusoidal and Square Input Voltage Waveforms

IEEE transactions on industrial electronics (1982), 2015-01, Vol.62 (1), p.211-220

2015

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Volltext

Polarization dependent analysis of AlGaN/GaN HEMT for high power applications

Solid-state electronics, 2007-01, Vol.51 (1), p.130-135

2007

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Organic thin film transistors with asymmetrically placed source and drain contact

Organic electronics, 2013-03, Vol.14 (3), p.862-867

2013

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Gate Capacitance Characterization of Silicon Carbide and Silicon Power mosfets Revisited

IEEE transactions on power electronics, 2022-09, Vol.37 (9), p.10572-10584

2022

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Co-Optimization Between Static and Switching Characteristics of LDMOS With p-Type Trapezoidal Gate Embedded in Drift Region

IEEE transactions on electron devices, 2022-08, Vol.69 (8), p.4102-4108

2022

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Volltext

Impact of the transition region between active area and edge termination on electrical performance of SiC MOSFET

Solid-state electronics, 2020-09, Vol.171, p.107873, Article 107873

2020

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Improving dynamic performance for split-gate trench power MOSFETs using variable vertical doping profile

Micro and Nanostructures, 2022-12, Vol.172, p.207446, Article 207446

2022

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CIMOSFET: A New MOSFET on SiC with a Superior Ron·Qgd Figure of Merit

Materials science forum, 2015-06, Vol.821-823, p.765-768

2015

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An ultralow loss 4H-SiC double trenches MOSFET with integrated heterojunction diodes and split gate

Semiconductor science and technology, 2020-08, Vol.35 (8), p.85025

2020

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A new analytical model for photo-dependent capacitances of GaAs MESFET’s with emphasis on the substrate related effects

Solid-state electronics, 2006-11, Vol.50 (11-12), p.1716-1727

2006

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Effects of JFET Region Design and Gate Oxide Thickness on the Static and Dynamic Performance of 650 V SiC Planar Power MOSFETs

Materials, 2022-08, Vol.15 (17), p.5995

2022

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A novel SOI-MESFET with parallel oxide-metal layers for high voltage and radio frequency applications

International journal of electronics and communications, 2018-01, Vol.83, p.541-548

2018

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A Split Gate Power FINFET With Improved ON-Resistance and Switching Performance

IEEE electron device letters, 2016-09, Vol.37 (9), p.1185-1188

2016

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A Review of Engineering Techniques to Suppress Ambipolarity in Tunnel FET

SILICON, 2022-04, Vol.14 (5), p.1887-1894

2022

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Novel SiC Trench MOSFET with Improved Third-Quadrant Performance and Switching Speed

Micromachines (Basel), 2024-02, Vol.15 (2), p.254

2024

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Physics-Based Compact Model for AlGaN/GaN MODFETs With Close-Formed I- V and C- V Characteristics

IEEE transactions on electron devices, 2009-12, Vol.56 (12), p.2881-2887

2009

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Volltext

4H-SiC Trench pMOSFETs for High-Frequency CMOS Inverters

Materials science forum, 2019-07, Vol.963, p.837-840

2019

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A Novel MOS-Channel Diode Embedded in a SiC Superjunction MOSFET for Enhanced Switching Performance and Superior Short Circuit Ruggedness

Electronics (Basel), 2021-11, Vol.10 (21), p.2619

2021

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Design of class-EM amplifier with consideration of parasitic non-linear capacitances and on-state resistance

IET power electronics, 2020-11, Vol.13 (14), p.3065-3071

2020

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Impact of high mobility III‐V compound material of a short channel thin‐film SiGe double gate junctionless MOSFET as a source

Engineering reports (Hoboken, N.J.), 2020-01, Vol.2 (1), p.n/a

2020

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A 28-GHz Low-Power Phased-Array Receiver Front-End With 360° RTPS Phase Shift Range

Comparative Study of SiC Planar MOSFETs With Different p-Body Designs

A Predictive Algorithm for Crosstalk Peaks of SiC MOSFET by Considering the Nonlinearity of Gate-Drain Capacitance

A High-Performance 4H-SiC JFET With Reverse Recovery Capability and Low Switching Loss

A Split Triple-Gate Power LDMOS With Improved Static-State and Switching Performance

Generalized Design Considerations and Analysis of Class-E Amplifier for Sinusoidal and Square Input Voltage Waveforms

Polarization dependent analysis of AlGaN/GaN HEMT for high power applications

Organic thin film transistors with asymmetrically placed source and drain contact

Gate Capacitance Characterization of Silicon Carbide and Silicon Power mosfets Revisited

Co-Optimization Between Static and Switching Characteristics of LDMOS With p-Type Trapezoidal Gate Embedded in Drift Region

Impact of the transition region between active area and edge termination on electrical performance of SiC MOSFET

Improving dynamic performance for split-gate trench power MOSFETs using variable vertical doping profile

CIMOSFET: A New MOSFET on SiC with a Superior Ron·Qgd Figure of Merit

An ultralow loss 4H-SiC double trenches MOSFET with integrated heterojunction diodes and split gate

A new analytical model for photo-dependent capacitances of GaAs MESFET’s with emphasis on the substrate related effects

Effects of JFET Region Design and Gate Oxide Thickness on the Static and Dynamic Performance of 650 V SiC Planar Power MOSFETs

A novel SOI-MESFET with parallel oxide-metal layers for high voltage and radio frequency applications

A Split Gate Power FINFET With Improved ON-Resistance and Switching Performance

A Review of Engineering Techniques to Suppress Ambipolarity in Tunnel FET

Novel SiC Trench MOSFET with Improved Third-Quadrant Performance and Switching Speed

Physics-Based Compact Model for AlGaN/GaN MODFETs With Close-Formed I- V and C- V Characteristics

4H-SiC Trench pMOSFETs for High-Frequency CMOS Inverters

A Novel MOS-Channel Diode Embedded in a SiC Superjunction MOSFET for Enhanced Switching Performance and Superior Short Circuit Ruggedness

Design of class-EM amplifier with consideration of parasitic non-linear capacitances and on-state resistance

Impact of high mobility III‐V compound material of a short channel thin‐film SiGe double gate junctionless MOSFET as a source

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