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Electrothermal power cycling of GaN and SiC cascode devices

Microelectronics and reliability, 2023-11, Vol.150, p.115117, Article 115117

2023

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GaN-on-Si Power Technology: Devices and Applications

IEEE transactions on electron devices, 2017-03, Vol.64 (3), p.779-795

2017

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Novel inspection-based mid-band derivations for CMOS cascodes and g m-boosted topologies along-with simplified compound structure gain-analysis

Analog integrated circuits and signal processing, 2017-04, Vol.91 (1), p.21-41

Rezaul Hasan, S. M.

2017

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A 40-GHz Mirrored-Cascode Differential Transimpedance Amplifier in 65-nm CMOS

IEEE journal of solid-state circuits, 2019-05, Vol.54 (5), p.1468-1474

2019

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Modeling and Design of A Compact Low Power Folded Cascode OpAmp With High EMI Immunity

IEEE transactions on electromagnetic compatibility, 2022-04, Vol.64 (2), p.595-598

2022

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Power-efficient class-AB telescopic cascode opamp

Electronics letters, 2018-05, Vol.54 (10), p.620-622

2018

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A new slew rate enhancement technique for operational transconductance amplifiers

International journal of circuit theory and applications, 2022-03, Vol.50 (3), p.997-1014

2022

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Design and Evaluation of a 6.5 kV, 400 A Super-Cascode Power Module

IEEE open journal of power electronics, 2024, Vol.5, p.1-15

2024

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In-operation Junction Temperature Extraction for Cascode GaN Devices Based on Turn-off Delay

IEEE transactions on power electronics, 2024-04, p.1-11

2024

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Analysis and Design of a Broadband Receiver Front End for 0.1-to-40-GHz Application

IEEE transactions on circuits and systems. I, Regular papers, 2021-06, Vol.68 (6), p.2393-2403

2021

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Evaluation and Application of 600 V GaN HEMT in Cascode Structure

IEEE transactions on power electronics, 2014-05, Vol.29 (5), p.2453-2461

2014

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Planar Dual Gate GaN HEMT Cascode Amplifier as a Voltage Readout pH Sensor With High and Tunable Sensitivities

IEEE electron device letters, 2020-03, Vol.41 (3), p.485-488

2020

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Design of a capacitor-less adaptively biased low dropout regulator using recycling folded cascode amplifier

International journal of electronics and communications, 2021-06, Vol.135, p.153745, Article 153745

2021

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Performance and Reliability Review of 650 V and 900 V Silicon and SiC Devices: MOSFETs, Cascode JFETs and IGBTs

IEEE transactions on industrial electronics (1982), 2020-09, Vol.67 (9), p.7375-7385, Article 7375

2020

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Paralleled GaN DHEMTs integrated cascode GaN switch for high-current applications

Electronics letters, 2018-07, Vol.54 (14), p.899-901

2018

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A V-Band Power Amplifier With 23.7-dBm Output Power, 22.1% PAE, and 29.7-dB Gain in 65-nm CMOS Technology

IEEE transactions on microwave theory and techniques, 2019-11, Vol.67 (11), p.4418-4426

2019

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Comparative Investigation on Paralleling Suitability for SiC MOSFETs and SiC/Si Cascode Devices

IEEE transactions on industrial electronics (1982), 2022-04, Vol.69 (4), p.3503-3514

2022

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Volltext

Design and Analysis of a 4.2 mW 4 K 6-8 GHz CMOS LNA for Superconducting Qubit Readout

IEEE journal of solid-state circuits, 2023-06, Vol.58 (6), p.1-11

2023

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650-V Normally-OFF GaN/SiC Cascode Device for Power Switching Applications

IEEE transactions on industrial electronics (1982), 2022-09, Vol.69 (9), p.8997-9006

2022

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Analytical Loss Model of High Voltage GaN HEMT in Cascode Configuration

IEEE transactions on power electronics, 2014-05, Vol.29 (5), p.2208-2219

2014

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Short-Circuit Failure Mechanisms of 650-V GaN/SiC Cascode Devices in Comparison With SiC MOSFETs

IEEE transactions on industrial electronics (1982), 2022-07, Vol.69 (7), p.7340-7348

2022

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Short-Circuit Characteristics and High-Current Induced Oscillations in a 1200-V/80-mΩ Normally-Off SiC/GaN Cascode Device

IEEE transactions on industrial electronics (1982), 2022-12, Vol.69 (12), p.12773-12783

2022

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A 124 fJ/Bit Cascode Current Mirror Array Based PUF With 1.50% Native Unstable Bit Ratio

IEEE transactions on circuits and systems. I, Regular papers, 2019-09, Vol.66 (9), p.3494-3503

2019

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A New Aspect of Saturation Phenomenon in FinFETs and Its Implication on Analog Circuits

IEEE transactions on electron devices, 2019-07, Vol.66 (7), p.2863-2868

2019

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Robustness of Cascode GaN HEMTs in Unclamped Inductive Switching

IEEE transactions on power electronics, 2022-04, Vol.37 (4), p.4148-4160

2022

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Electrothermal power cycling of GaN and SiC cascode devices

GaN-on-Si Power Technology: Devices and Applications

Novel inspection-based mid-band derivations for CMOS cascodes and g m-boosted topologies along-with simplified compound structure gain-analysis

A 40-GHz Mirrored-Cascode Differential Transimpedance Amplifier in 65-nm CMOS

Modeling and Design of A Compact Low Power Folded Cascode OpAmp With High EMI Immunity

Power-efficient class-AB telescopic cascode opamp

A new slew rate enhancement technique for operational transconductance amplifiers

Design and Evaluation of a 6.5 kV, 400 A Super-Cascode Power Module

In-operation Junction Temperature Extraction for Cascode GaN Devices Based on Turn-off Delay

Analysis and Design of a Broadband Receiver Front End for 0.1-to-40-GHz Application

Evaluation and Application of 600 V GaN HEMT in Cascode Structure

Planar Dual Gate GaN HEMT Cascode Amplifier as a Voltage Readout pH Sensor With High and Tunable Sensitivities

Design of a capacitor-less adaptively biased low dropout regulator using recycling folded cascode amplifier

Performance and Reliability Review of 650 V and 900 V Silicon and SiC Devices: MOSFETs, Cascode JFETs and IGBTs

Paralleled GaN DHEMTs integrated cascode GaN switch for high-current applications

A V-Band Power Amplifier With 23.7-dBm Output Power, 22.1% PAE, and 29.7-dB Gain in 65-nm CMOS Technology

Comparative Investigation on Paralleling Suitability for SiC MOSFETs and SiC/Si Cascode Devices

Design and Analysis of a 4.2 mW 4 K 6-8 GHz CMOS LNA for Superconducting Qubit Readout

650-V Normally-OFF GaN/SiC Cascode Device for Power Switching Applications

Analytical Loss Model of High Voltage GaN HEMT in Cascode Configuration

Short-Circuit Failure Mechanisms of 650-V GaN/SiC Cascode Devices in Comparison With SiC MOSFETs

Short-Circuit Characteristics and High-Current Induced Oscillations in a 1200-V/80-mΩ Normally-Off SiC/GaN Cascode Device

A 124 fJ/Bit Cascode Current Mirror Array Based PUF With 1.50% Native Unstable Bit Ratio

A New Aspect of Saturation Phenomenon in FinFETs and Its Implication on Analog Circuits

Robustness of Cascode GaN HEMTs in Unclamped Inductive Switching

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