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Short-Circuit Protection Circuits for Silicon-Carbide Power Transistors

IEEE transactions on industrial electronics (1982), 2016-04, Vol.63 (4), p.1995-2004

2016

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Performance and Short-Circuit Reliability of SiC MOSFETs With Enhanced JFET Doping Design

IEEE transactions on electron devices, 2023-05, Vol.70 (5), p.1-8

2023

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Volltext

A Novel SiC MOSFET With Embedded Auto-Adjust JFET With Improved Short Circuit Performance

IEEE electron device letters, 2021-12, Vol.42 (12), p.1751-1754

2021

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Volltext

Impact of JFET width on conduction characteristic for p-channel SiC IGBT

Solid-state electronics, 2024-06, Vol.216, Article 108907

2024

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Charge-based Model for Junction FETs

IEEE transactions on electron devices, 2018-07, Vol.65 (7), p.2694-2698

2018

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Demonstration of 4H-SiC Digital Integrated Circuits Above 800 °C

IEEE electron device letters, 2017-08, Vol.38 (8), p.1082-1085

2017

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A Single-Drive SiC-JFET-SCM for Solid State Circuit Breaker in MVDC Distribution Networks

IEEE transactions on industrial electronics (1982), 2023-11, Vol.70 (11), p.1-11

2023

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Volltext

Demonstration of a GaN-Based Vertical-Channel JFET Fabricated by Selective-Area Regrowth

IEEE transactions on electron devices, 2018-12, Vol.65 (12), p.5329-5336

2018

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A Backside-Illuminated 3.5 μm Pixel With 86% Demodulation Contrast at 1.0 V Voltage Swing for Indirect Time-of-Flight Image Sensors

IEEE transactions on electron devices, 2023-09, Vol.70 (9), p.4712-4718

2023

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Volltext

Comparison of Thermal Stress During Short-Circuit in Different Types of 1.2-kV SiC Transistors Based on Experiments and Simulations

IEEE transactions on industrial electronics (1982), 2021-03, Vol.68 (3), p.2608-2616

2021

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Volltext

Normally-off 400 °C Operation of n- and p-JFETs With a Side-Gate Structure Fabricated by Ion Implantation Into a High-Purity Semi-Insulating SiC Substrate

IEEE electron device letters, 2019-06, Vol.40 (6), p.866-869, Article 866

2019

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Characterization and Analysis on Performance and Avalanche Reliability of SiC MOSFETs With Varied JFET Region Width

IEEE transactions on electron devices, 2021-08, Vol.68 (8), p.3982-3990

2021

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Volltext

Prolonged 500 °C Demonstration of 4H-SiC JFET ICs With Two-Level Interconnect

IEEE electron device letters, 2016-05, Vol.37 (5), p.625-628

2016

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Volltext

A Bootstrap Diode Emulator Integration to 600 V N-Type Epitaxial Platform for High Voltage Gate Driver IC

IEEE electron device letters, 2022-11, Vol.43 (11), p.1941-1944

2022

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A High-Performance 4H-SiC JFET With Reverse Recovery Capability and Low Switching Loss

IEEE transactions on electron devices, 2021-10, Vol.68 (10), p.5022-5028

2021

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Volltext

3-D Simulation Study of a Normally-OFF GaN Lateral Multi-Channel JFET With Optimized Electrical Field Transfer Terminal Structure

IEEE transactions on electron devices, 2022-04, Vol.69 (4), p.1918-1923

2022

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Volltext

SiC versus Si-Evaluation of Potentials for Performance Improvement of Inverter and DC-DC Converter Systems by SiC Power Semiconductors

IEEE transactions on industrial electronics (1982), 2011-07, Vol.58 (7), p.2872-2882

2011

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Volltext

Novel Self-Modulated Lateral Superjunction Device Suppressing the Inherent 3-D JFET Effect

IEEE electron device letters, 2020-09, Vol.41 (9), p.1392-1395

2020

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Effects of JFET Region Design and Gate Oxide Thickness on the Static and Dynamic Performance of 650 V SiC Planar Power MOSFETs

Materials, 2022-08, Vol.15 (17), p.5995

2022

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(Ultra)Wide-Bandgap Vertical Power FinFETs

IEEE transactions on electron devices, 2020-10, Vol.67 (10), p.3960-3971

2020

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650-V Normally-OFF GaN/SiC Cascode Device for Power Switching Applications

IEEE transactions on industrial electronics (1982), 2022-09, Vol.69 (9), p.8997-9006

2022

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Volltext

Wide-Bandgap Solid-State Circuit Breakers for DC Power Systems: Device and Circuit Considerations

IEEE transactions on electron devices, 2015-02, Vol.62 (2), p.294-300

2015

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A Gradient Doped Integrated JFET With Improved Current Capability for HV Start-Up Circuit

IEEE electron device letters, 2022-07, Vol.43 (7), p.1097-1100

2022

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Short-Circuit Failure Mechanisms of 650-V GaN/SiC Cascode Devices in Comparison With SiC MOSFETs

IEEE transactions on industrial electronics (1982), 2022-07, Vol.69 (7), p.7340-7348

2022

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Volltext

Short-Circuit Characteristics and High-Current Induced Oscillations in a 1200-V/80-mΩ Normally-Off SiC/GaN Cascode Device

IEEE transactions on industrial electronics (1982), 2022-12, Vol.69 (12), p.12773-12783

2022

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Short-Circuit Protection Circuits for Silicon-Carbide Power Transistors

Performance and Short-Circuit Reliability of SiC MOSFETs With Enhanced JFET Doping Design

A Novel SiC MOSFET With Embedded Auto-Adjust JFET With Improved Short Circuit Performance

Impact of JFET width on conduction characteristic for p-channel SiC IGBT

Charge-based Model for Junction FETs

Demonstration of 4H-SiC Digital Integrated Circuits Above 800 °C

A Single-Drive SiC-JFET-SCM for Solid State Circuit Breaker in MVDC Distribution Networks

Demonstration of a GaN-Based Vertical-Channel JFET Fabricated by Selective-Area Regrowth

A Backside-Illuminated 3.5 μm Pixel With 86% Demodulation Contrast at 1.0 V Voltage Swing for Indirect Time-of-Flight Image Sensors

Comparison of Thermal Stress During Short-Circuit in Different Types of 1.2-kV SiC Transistors Based on Experiments and Simulations

Normally-off 400 °C Operation of n- and p-JFETs With a Side-Gate Structure Fabricated by Ion Implantation Into a High-Purity Semi-Insulating SiC Substrate

Characterization and Analysis on Performance and Avalanche Reliability of SiC MOSFETs With Varied JFET Region Width

Prolonged 500 °C Demonstration of 4H-SiC JFET ICs With Two-Level Interconnect

A Bootstrap Diode Emulator Integration to 600 V N-Type Epitaxial Platform for High Voltage Gate Driver IC

A High-Performance 4H-SiC JFET With Reverse Recovery Capability and Low Switching Loss

3-D Simulation Study of a Normally-OFF GaN Lateral Multi-Channel JFET With Optimized Electrical Field Transfer Terminal Structure

SiC versus Si-Evaluation of Potentials for Performance Improvement of Inverter and DC-DC Converter Systems by SiC Power Semiconductors

Novel Self-Modulated Lateral Superjunction Device Suppressing the Inherent 3-D JFET Effect

Effects of JFET Region Design and Gate Oxide Thickness on the Static and Dynamic Performance of 650 V SiC Planar Power MOSFETs

(Ultra)Wide-Bandgap Vertical Power FinFETs

650-V Normally-OFF GaN/SiC Cascode Device for Power Switching Applications

Wide-Bandgap Solid-State Circuit Breakers for DC Power Systems: Device and Circuit Considerations

A Gradient Doped Integrated JFET With Improved Current Capability for HV Start-Up Circuit

Short-Circuit Failure Mechanisms of 650-V GaN/SiC Cascode Devices in Comparison With SiC MOSFETs

Short-Circuit Characteristics and High-Current Induced Oscillations in a 1200-V/80-mΩ Normally-Off SiC/GaN Cascode Device

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