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The Trench Power MOSFET: Part I-History, Technology, and Prospects

IEEE transactions on electron devices, 2017-03, Vol.64 (3), p.674-691

2017

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Monitoring Bond Wires Fatigue of Multichip IGBT Module Using Time Duration of the Gate Charge

IEEE transactions on power electronics, 2021-01, Vol.36 (1), p.888-897

2021

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Non-Volatile Polymer Electroluminescence Programmable with Ferroelectric Field-Induced Charge Injection Gate

Advanced functional materials, 2016-08, Vol.26 (30), p.5391-5399

2016

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Ferroelectric Polymers: Non-Volatile Polymer Electroluminescence Programmable with Ferroelectric Field-Induced Charge Injection Gate (Adv. Funct. Mater. 30/2016)

Advanced functional materials, 2016-08, Vol.26 (30), p.5381-5381

2016

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Low switching loss and increased short-circuit capability split-gate SiC trench MOSFET with p-type pillar

Chinese physics B, 2023-05, Vol.32 (5), p.58501-776

2023

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Comparative Study of SiC Planar MOSFETs With Different p-Body Designs

IEEE transactions on electron devices, 2020-03, Vol.67 (3), p.1071-1076

2020

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4H-SiC Trench MOSFET With Floating/Grounded Junction Barrier-controlled Gate Structure

IEEE transactions on electron devices, 2017-11, Vol.64 (11), p.4568-4574

2017

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Simulation study on single-event burnout reliability of 4H-SiC trench gate MOSFET with combined P-buried layer

Microelectronics and reliability, 2023-03, Vol.142, p.114931, Article 114931

2023

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4H-SiC Step Trench Gate Power Metal-Oxide-Semiconductor Field-Effect Transistor

IEEE electron device letters, 2016-05, Vol.37 (5), p.633-635

2016

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Design of Drain-Extended MOS Devices Using RESURF Techniques for High Switching Performance and Avalanche Reliability

IEEE access, 2021, Vol.9, p.155370-155379

2021

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SiC Heterojunction Trench MOSFET with a Buried P-Type Pillar for the Low Gate-Drain Charge and Switching Loss

Micromachines (Basel), 2022-02, Vol.13 (2), p.248

2022

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Embedded Hardware Artificial Neural Network Control for Global and Real-Time Imbalance Current Suppression of Parallel Connected IGBTs

IEEE transactions on industrial electronics (1982), 2020-03, Vol.67 (3), p.2186-2196

2020

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Shield Gate Trench MOSFET With Narrow Gate Architecture and Low-k Dielectric Layer

IEEE electron device letters, 2020-05, Vol.41 (5), p.749-752

2020

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Modulation of Ciss of a 4H-SiC Planar MOSFET With a Shorter Sidewall and a Thicker Gate

IEEE electron device letters, 2023-11, Vol.44 (11), p.1825-1828

2023

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Split-Gate 1.2-kV 4H-SiC MOSFET: Analysis and Experimental Validation

IEEE electron device letters, 2017-10, Vol.38 (10), p.1437-1440

2017

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Monitoring Chip Branch Failure in Multichip IGBT Modules Based on Gate Charge

IEEE transactions on industrial electronics (1982), 2023-05, Vol.70 (5), p.5214-5223

2023

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Volltext

The Trench Power MOSFET-Part II: Application Specific VDMOS, LDMOS, Packaging, and Reliability

IEEE transactions on electron devices, 2017-03, Vol.64 (3), p.692-712

2017

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Determination and Implementation of SiC MOSFETs Zero Turn Off Loss Transition Considering No Miller Plateau

IEEE transactions on power electronics, 2023-12, Vol.38 (12), p.1-14

2023

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Low ON-Resistance SiC Trench/Planar MOSFET With Reduced OFF-State Oxide Field and Low Gate Charges

IEEE electron device letters, 2016-11, Vol.37 (11), p.1458-1461

2016

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Gate Quantum Capacitance Effects in Nanoscale Transistors

Nano letters, 2019-10, Vol.19 (10), p.7130-7137

2019

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A High-Performance 4H-SiC JFET With Reverse Recovery Capability and Low Switching Loss

IEEE transactions on electron devices, 2021-10, Vol.68 (10), p.5022-5028

2021

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A Design of Wireless Power Receiver With Gate Charge Recycled Dual-Mode Active Rectifier and Step-Down Converter With 88.2% System Efficiency for Power Management IC

IEEE transactions on power electronics, 2023-01, Vol.38 (1), p.1-12

2023

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Online Gate-Oxide Degradation Monitoring of Planar SiC MOSFETs Based on Gate Charge Time

IEEE transactions on power electronics, 2022-06, Vol.37 (6), p.7333-7343

2022

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An experimental study on switching waveform design with gate charge control for power MOSFETs

Power electronic devices and components, 2023-10, Vol.6, p.100043, Article 100043

2023

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Comparison between ig integration and vgs derivation methods dedicated to fast short-circuit 2D diagnosis for wide bandgap power transistors

Mathematics and computers in simulation, 2021-05, Vol.183, p.171-186

2021

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The Trench Power MOSFET: Part I-History, Technology, and Prospects

Monitoring Bond Wires Fatigue of Multichip IGBT Module Using Time Duration of the Gate Charge

Non-Volatile Polymer Electroluminescence Programmable with Ferroelectric Field-Induced Charge Injection Gate

Ferroelectric Polymers: Non-Volatile Polymer Electroluminescence Programmable with Ferroelectric Field-Induced Charge Injection Gate (Adv. Funct. Mater. 30/2016)

Low switching loss and increased short-circuit capability split-gate SiC trench MOSFET with p-type pillar

Comparative Study of SiC Planar MOSFETs With Different p-Body Designs

4H-SiC Trench MOSFET With Floating/Grounded Junction Barrier-controlled Gate Structure

Simulation study on single-event burnout reliability of 4H-SiC trench gate MOSFET with combined P-buried layer

4H-SiC Step Trench Gate Power Metal-Oxide-Semiconductor Field-Effect Transistor

Design of Drain-Extended MOS Devices Using RESURF Techniques for High Switching Performance and Avalanche Reliability

SiC Heterojunction Trench MOSFET with a Buried P-Type Pillar for the Low Gate-Drain Charge and Switching Loss

Embedded Hardware Artificial Neural Network Control for Global and Real-Time Imbalance Current Suppression of Parallel Connected IGBTs

Shield Gate Trench MOSFET With Narrow Gate Architecture and Low-k Dielectric Layer

Modulation of Ciss of a 4H-SiC Planar MOSFET With a Shorter Sidewall and a Thicker Gate

Split-Gate 1.2-kV 4H-SiC MOSFET: Analysis and Experimental Validation

Monitoring Chip Branch Failure in Multichip IGBT Modules Based on Gate Charge

The Trench Power MOSFET-Part II: Application Specific VDMOS, LDMOS, Packaging, and Reliability

Determination and Implementation of SiC MOSFETs Zero Turn Off Loss Transition Considering No Miller Plateau

Low ON-Resistance SiC Trench/Planar MOSFET With Reduced OFF-State Oxide Field and Low Gate Charges

Gate Quantum Capacitance Effects in Nanoscale Transistors

A High-Performance 4H-SiC JFET With Reverse Recovery Capability and Low Switching Loss

A Design of Wireless Power Receiver With Gate Charge Recycled Dual-Mode Active Rectifier and Step-Down Converter With 88.2% System Efficiency for Power Management IC

Online Gate-Oxide Degradation Monitoring of Planar SiC MOSFETs Based on Gate Charge Time

An experimental study on switching waveform design with gate charge control for power MOSFETs

Comparison between ig integration and vgs derivation methods dedicated to fast short-circuit 2D diagnosis for wide bandgap power transistors

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