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A Reliable Ultrafast Short-Circuit Protection Method for E-Mode GaN HEMT

IEEE transactions on power electronics, 2020-09, Vol.35 (9), p.8926-8933

2020

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Robustness of 650-V Enhancement-Mode GaN HEMTs Under Various Short-Circuit Conditions

IEEE transactions on industry applications, 2019-03, Vol.55 (2), p.1807-1816

2019

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Short-Circuit Characteristics and High-Current Induced Oscillations in a 1200-V/80-mΩ Normally-Off SiC/GaN Cascode Device

IEEE transactions on industrial electronics (1982), 2022-12, Vol.69 (12), p.12773-12783

2022

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A Normally-off Copackaged SiC-JFET/GaN-HEMT Cascode Device for High-Voltage and High-Frequency Applications

IEEE transactions on power electronics, 2020-09, Vol.35 (9), p.9671-9681

2020

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Comprehensive TCAD Analysis of Threshold Voltage on GaN-on-Si MOS-Channel Fully Recessed Gate HEMTs

IEEE transactions on electron devices, 2022-02, Vol.69 (2), p.669-674

2022

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E-mode p-n Junction/AlGaN/GaN (PNJ) HEMTs

IEEE electron device letters, 2020-04, Vol.41 (4), p.1-1

2020

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Monolithic Integrated Normally OFF GaN Power Device With Antiparallel Lateral Schottky Barrier Controlled Schottky Rectifier

IEEE transactions on electron devices, 2021-04, Vol.68 (4), p.1778-1783

2021

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Study of TaN-Gated p-GaN E-Mode HEMT

IEEE transactions on electron devices, 2023-04, Vol.70 (4), p.1-6

2023

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High-Voltage E-Mode p-GaN Gate HEMT on Sapphire With Gate Termination Extension

IEEE transactions on electron devices, 2024-03, Vol.71 (3), p.1592

2024

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Suppression of Buffer Trapping Effect in GaN-on-Si Active-Passivation p-GaN Gate HEMT via Light/Hole Pumping

IEEE transactions on electron devices, 2024-01, Vol.71 (1), p.484-489

2024

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Self-Aligned Process for Selectively Etched p-GaN-Gated AlGaN/GaN-on-Si HFETs

IEEE transactions on electron devices, 2018-09, Vol.65 (9), p.3732-3738

2018

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Temperature-dependent dynamic RDS,ON under different operating conditions in enhancement-mode GaN HEMTs

IET power electronics, 2020-02, Vol.13 (3), p.456-462

2020

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High-temperature electrical performances and physics-based analysis of p-GaN HEMT device

IET power electronics, 2020-02, Vol.13 (3), p.420-425

2020

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Enhancement-Mode Operation of Nanochannel Array (NCA) AlGaN/GaN HEMTs

IEEE electron device letters, 2012-03, Vol.33 (3), p.354-356

2012

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Influence of Carbon on pBTI Degradation in GaN-on-Si E-Mode MOSc-HEMT

IEEE transactions on electron devices, 2021-04, Vol.68 (4), p.2017-2024

2021

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Volltext

Suppression of Current Collapse in Enhancement Mode GaN-Based HEMTs Using an AlGaN/GaN/AlGaN Double Heterostructure

IEEE transactions on electron devices, 2017-04, Vol.64 (4), p.1505-1510

2017

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Characterizations of Enhancement-Mode Double Heterostructure GaN HEMTs With Gate Field Plates

IEEE transactions on electron devices, 2018-02, Vol.65 (2), p.488-492

2018

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High-Performance Integrated Dual-Gate AlGaN/GaN Enhancement-Mode Transistor

IEEE electron device letters, 2010-09, Vol.31 (9), p.990-992

2010

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Linearity improvement in E-mode ferroelectric GaN MOS-HEMT using dual gate technology

Micro & nano letters, 2019-05, Vol.14 (6), p.618-622

2019

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Analytical Model for the Threshold Voltage of -(Al)GaN High-Electron-Mobility Transistors

IEEE transactions on electron devices, 2018-01, Vol.65 (1), p.79-86

2018

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Enhancement-Mode AlN/GaN/AlGaN DHFET With 700-mS/mm g and 112-GHz f

IEEE electron device letters, 2010-10, Vol.31 (10), p.1116-1118

2010

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Quality of the Oxidation Interface of AlGaN in Enhancement-Mode AlGaN/GaN High-Electron Mobility Transistors

IEEE transactions on electron devices, 2012-12, Vol.59 (12), p.3334-3338

2012

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Enhancement-Mode AlN/GaN MOSHFETs on Si Substrate With Regrown Source/Drain by MOCVD

IEEE electron device letters, 2012-08, Vol.33 (8), p.1123-1125

2012

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DC and RF Performance of Gate-Last AlN/GaN MOSHEMTs on Si With Regrown Source/Drain

IEEE transactions on electron devices, 2013-10, Vol.60 (10), p.3019-3024

2013

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Low-Frequency Noise in Enhancement-Mode GaN MOS-HEMTs by Using Stacked \hbox\hbox/\hbox\hbox/\hbox\hbox Gate Dielectric

IEEE electron device letters, 2012-07, Vol.33 (7), p.958-960

2012

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A Reliable Ultrafast Short-Circuit Protection Method for E-Mode GaN HEMT

Robustness of 650-V Enhancement-Mode GaN HEMTs Under Various Short-Circuit Conditions

Short-Circuit Characteristics and High-Current Induced Oscillations in a 1200-V/80-mΩ Normally-Off SiC/GaN Cascode Device

A Normally-off Copackaged SiC-JFET/GaN-HEMT Cascode Device for High-Voltage and High-Frequency Applications

Comprehensive TCAD Analysis of Threshold Voltage on GaN-on-Si MOS-Channel Fully Recessed Gate HEMTs

E-mode p-n Junction/AlGaN/GaN (PNJ) HEMTs

Monolithic Integrated Normally OFF GaN Power Device With Antiparallel Lateral Schottky Barrier Controlled Schottky Rectifier

Study of TaN-Gated p-GaN E-Mode HEMT

High-Voltage E-Mode p-GaN Gate HEMT on Sapphire With Gate Termination Extension

Suppression of Buffer Trapping Effect in GaN-on-Si Active-Passivation p-GaN Gate HEMT via Light/Hole Pumping

Self-Aligned Process for Selectively Etched p-GaN-Gated AlGaN/GaN-on-Si HFETs

Temperature-dependent dynamic RDS,ON under different operating conditions in enhancement-mode GaN HEMTs

High-temperature electrical performances and physics-based analysis of p-GaN HEMT device

Enhancement-Mode Operation of Nanochannel Array (NCA) AlGaN/GaN HEMTs

Influence of Carbon on pBTI Degradation in GaN-on-Si E-Mode MOSc-HEMT

Suppression of Current Collapse in Enhancement Mode GaN-Based HEMTs Using an AlGaN/GaN/AlGaN Double Heterostructure

Characterizations of Enhancement-Mode Double Heterostructure GaN HEMTs With Gate Field Plates

High-Performance Integrated Dual-Gate AlGaN/GaN Enhancement-Mode Transistor

Linearity improvement in E-mode ferroelectric GaN MOS-HEMT using dual gate technology

Analytical Model for the Threshold Voltage of -(Al)GaN High-Electron-Mobility Transistors

Enhancement-Mode AlN/GaN/AlGaN DHFET With 700-mS/mm g and 112-GHz f

Quality of the Oxidation Interface of AlGaN in Enhancement-Mode AlGaN/GaN High-Electron Mobility Transistors

Enhancement-Mode AlN/GaN MOSHFETs on Si Substrate With Regrown Source/Drain by MOCVD

DC and RF Performance of Gate-Last AlN/GaN MOSHEMTs on Si With Regrown Source/Drain

Low-Frequency Noise in Enhancement-Mode GaN MOS-HEMTs by Using Stacked \hbox\hbox/\hbox\hbox/\hbox\hbox Gate Dielectric

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