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The effect of passivation-layer process to amorphous InGaZnO thin-film transistors using back-channel etch method

Semiconductor science and technology, 2022-04, Vol.37 (4), p.45005

2022

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High-Performance Back-Channel-Etch Thin-Film Transistors With Zinc Tin Oxide as Barrier Layer via Spray Coating

IEEE transactions on electron devices, 2019-09, Vol.66 (9), p.3854-3860

2019

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P‐1.13: A 10.1‐inch High Stability 120Hz Metal Oxide In‐Cell Touch LCD Display

SID International Symposium Digest of technical papers, 2022-10, Vol.53 (S1), p.609-611

2022

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Highly Stable AlInZnSnO and InZnO Double-Layer Oxide Thin-Film Transistors With Mobility Over 50 \text^/\text \cdot \text for High-Speed Operation

IEEE electron device letters, 2018-04, Vol.39 (4), p.508-511

2018

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37.2: Development of High Performance Oxide TFTs Using Back‐Channel‐Etch Structure With Copper Electrodes

SID International Symposium Digest of technical papers, 2022-10, Vol.53 (S1), p.396-399

2022

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Performance and Stability Improvements of Back-Channel-Etched Amorphous Indium-Gallium-Zinc Thin-Film-Transistors by CF4+O2 Plasma Treatment

IEEE electron device letters, 2015-09, Vol.36 (9), p.911-913

2015

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A Back-Channel-Etched Amorphous InGaZnO Thin-Film Transistor Technology With Al-Doped ZnO as Source/Drain and Pixel Electrodes

IEEE transactions on electron devices, 2016-05, Vol.63 (5), p.2205-2209

2016

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Nb Doped TiO2 Protected Back-Channel-Etched Amorphous InGaZnO Thin Film Transistors

IEEE electron device letters, 2017-02, Vol.38 (2), p.213-216

2017

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Back-Channel-Etched Thin-Film Transistors With Tunable Acid-Resistant Zr-Doped Indium Oxide Active Layer

IEEE transactions on electron devices, 2019-01, Vol.66 (1), p.464-469

2019

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Enhanced Reliability of a-IGZO TFTs with a Reduced Feature Size and a Clean Etch-Stopper Layer Structure

Nanoscale research letters, 2019-05, Vol.14 (1), p.165-10, Article 165

2019

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The effect of a zinc-tin-oxide layer used as an etch-stopper layer on the bias stress stability of solution-processed indium-gallium-zinc-oxide thin-film transistors

Journal of physics. D, Applied physics, 2014-09, Vol.47 (38), p.385104-7

2014

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High-Performance Low-Cost Back-Channel-Etch Amorphous Gallium–Indium–Zinc Oxide Thin-Film Transistors by Curing and Passivation of the Damaged Back Channel

ACS applied materials & interfaces, 2013-12, Vol.5 (23), p.12262-12267

2013

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Effects of Etching Residue on Positive Shift of Threshold Voltage in Amorphous Indium-Zinc-Oxide Thin-Film Transistors Based on Back-Channel-Etch Structure

IEEE transactions on electron devices, 2014-01, Vol.61 (1), p.92-97

2014

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Impact of the Source/Drain Electrode Process on the Mobility-Threshold Trade-Off for InSnZnO Thin-Film Transistors

ACS applied electronic materials, 2023-03, Vol.5 (3), p.1615-1619

2023

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Damage-Free Back Channel Wet-Etch Process in Amorphous Indium–Zinc-Oxide Thin-Film Transistors Using a Carbon-Nanofilm Barrier Layer

ACS applied materials & interfaces, 2014-07, Vol.6 (14), p.11318-11325

2014

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15.1: Invited Paper: Effect of Cu Barrier Source/Drain Electrode on the Back‐Channel‐Etched High Mobility Oxide Thin‐Film Transistors

SID International Symposium Digest of technical papers, 2019-09, Vol.50 (S1), p.150-151

2019

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P‐16: The impact of Deposition Rate and Hydrophobicity of Passivation Layer on The Stability of Back‐Channel‐Etch Amorphous InGaZnO Thin‐Film Transistors

SID International Symposium Digest of technical papers, 2018-05, Vol.49 (1), p.1239-1241

2018

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Development of Back-Channel Etched In-W-Zn-O Thin-Film Transistors

Journal of display technology, 2016-03, Vol.12 (3), p.228-231

2016

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P-15: AZO Etch Buffer Layer based Back-Channel-Etch a-IGZO TFT Technology

SID International Symposium Digest of technical papers, 2016-05, Vol.47 (1), p.1172-1175

2016

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21‐2: Highly Reliable Amorphous Indium‐Gallium‐Zinc‐Tin‐Oxide TFTs with Back‐Channel‐Etch Structure

SID International Symposium Digest of technical papers, 2017-05, Vol.48 (1), p.291-293

2017

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P-9: High Performance Back Channel Etch Metal Oxide Thin-film Transistor with Double Active Layers

SID International Symposium Digest of technical papers, 2016-05, Vol.47 (1), p.1151-1154

2016

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P‐10: High‐Density Plasma Sputtered InZnSnO Thin‐Film Transistors Fabricated by Back Channel Etching Method on Flexible Polyimide Substrate

SID International Symposium Digest of technical papers, 2017-05, Vol.48 (1), p.1262-1264

2017

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The pH-dependent corrosion behavior of ternary oxide semiconductors and common metals and its application for solution-processed oxide thin film transistors circuit integration

Journal of alloys and compounds, 2017-08, Vol.714, p.572-582

2017

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P-14: High Mobility BCE Al doped ZnSnInO TFT Fabricated Using Mixed Acid Mo/Al/Mo Etchant

SID International Symposium Digest of technical papers, 2014-06, Vol.45 (1), p.994-996

2014

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26-1: Invited Paper: Metal Oxide TFT Turnkey Manufacturing Solution for a-Si TFT Lines

SID International Symposium Digest of technical papers, 2016-05, Vol.47 (1), p.318-321

2016

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The effect of passivation-layer process to amorphous InGaZnO thin-film transistors using back-channel etch method

High-Performance Back-Channel-Etch Thin-Film Transistors With Zinc Tin Oxide as Barrier Layer via Spray Coating

P‐1.13: A 10.1‐inch High Stability 120Hz Metal Oxide In‐Cell Touch LCD Display

Highly Stable AlInZnSnO and InZnO Double-Layer Oxide Thin-Film Transistors With Mobility Over 50 \text^/\text \cdot \text for High-Speed Operation

37.2: Development of High Performance Oxide TFTs Using Back‐Channel‐Etch Structure With Copper Electrodes

Performance and Stability Improvements of Back-Channel-Etched Amorphous Indium-Gallium-Zinc Thin-Film-Transistors by CF4+O2 Plasma Treatment

A Back-Channel-Etched Amorphous InGaZnO Thin-Film Transistor Technology With Al-Doped ZnO as Source/Drain and Pixel Electrodes

Nb Doped TiO2 Protected Back-Channel-Etched Amorphous InGaZnO Thin Film Transistors

Back-Channel-Etched Thin-Film Transistors With Tunable Acid-Resistant Zr-Doped Indium Oxide Active Layer

Enhanced Reliability of a-IGZO TFTs with a Reduced Feature Size and a Clean Etch-Stopper Layer Structure

The effect of a zinc-tin-oxide layer used as an etch-stopper layer on the bias stress stability of solution-processed indium-gallium-zinc-oxide thin-film transistors

High-Performance Low-Cost Back-Channel-Etch Amorphous Gallium–Indium–Zinc Oxide Thin-Film Transistors by Curing and Passivation of the Damaged Back Channel

Effects of Etching Residue on Positive Shift of Threshold Voltage in Amorphous Indium-Zinc-Oxide Thin-Film Transistors Based on Back-Channel-Etch Structure

Impact of the Source/Drain Electrode Process on the Mobility-Threshold Trade-Off for InSnZnO Thin-Film Transistors

Damage-Free Back Channel Wet-Etch Process in Amorphous Indium–Zinc-Oxide Thin-Film Transistors Using a Carbon-Nanofilm Barrier Layer

15.1: Invited Paper: Effect of Cu Barrier Source/Drain Electrode on the Back‐Channel‐Etched High Mobility Oxide Thin‐Film Transistors

P‐16: The impact of Deposition Rate and Hydrophobicity of Passivation Layer on The Stability of Back‐Channel‐Etch Amorphous InGaZnO Thin‐Film Transistors

Development of Back-Channel Etched In-W-Zn-O Thin-Film Transistors

P-15: AZO Etch Buffer Layer based Back-Channel-Etch a-IGZO TFT Technology

21‐2: Highly Reliable Amorphous Indium‐Gallium‐Zinc‐Tin‐Oxide TFTs with Back‐Channel‐Etch Structure

P-9: High Performance Back Channel Etch Metal Oxide Thin-film Transistor with Double Active Layers

P‐10: High‐Density Plasma Sputtered InZnSnO Thin‐Film Transistors Fabricated by Back Channel Etching Method on Flexible Polyimide Substrate

The pH-dependent corrosion behavior of ternary oxide semiconductors and common metals and its application for solution-processed oxide thin film transistors circuit integration

P-14: High Mobility BCE Al doped ZnSnInO TFT Fabricated Using Mixed Acid Mo/Al/Mo Etchant

26-1: Invited Paper: Metal Oxide TFT Turnkey Manufacturing Solution for a-Si TFT Lines

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