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Demonstration of 4H-SiC Digital Integrated Circuits Above 800 °C

IEEE electron device letters, 2017-08, Vol.38 (8), p.1082-1085

2017

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Extreme temperature 6H-SiC JFET integrated circuit technology

Physica status solidi. A, Applications and materials science, 2009-10, Vol.206 (10), p.2329-2345

2009

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Operational Testing of 4H-SiC JFET ICs for 60 Days Directly Exposed to Venus Surface Atmospheric Conditions

IEEE journal of the Electron Devices Society, 2019-01, Vol.7, p.100-110

2019

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Towards Making SiC ICs Durable and Accessible for Use in the Most Extreme Environments (Including Venus)

Materials science forum, 2020-07, Vol.1004, p.1057-1065

2020

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Prolonged 500 °C Demonstration of 4H-SiC JFET ICs With Two-Level Interconnect

IEEE electron device letters, 2016-05, Vol.37 (5), p.625-628

2016

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Experimental Study on Mitigation of Lifetime-Limiting Dielectric Cracking in Extreme Temperature 4H-SiC JFET Integrated Circuits

Materials science forum, 2020-07, Vol.1004, p.1148-1155

2020

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The Path Towards Realistic ASIC Electronics Deployment Into Previously Impractical Extreme Application Environments

2022 Device Research Conference (DRC), 2022, p.1-2

2022

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Demonstration of 4H-SiC JFET Digital ICs Across 1000°C Temperature Range without Change to Input Voltages

Materials science forum, 2019-07, Vol.963, p.813-817

2019

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Experimental and Theoretical Study of 4H-SiC JFET Threshold Voltage Body Bias Effect from 25 °C to 500 °C

Materials Science Forum, 2016-05, Vol.858, p.903-907

2016

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Prolonged silicon carbide integrated circuit operation in Venus surface atmospheric conditions

AIP advances, 2016-12, Vol.6 (12), p.125119-125119-7

2016

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Cross-sectional TEM and KOH-Etch Studies of Extended Defects in 3C-SiC p+n Junction Diodes Grown on 4H-SiC Mesas

Journal of electronic materials, 2008-05, Vol.37 (5), p.672-680

2008

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Stable Electrical Operation of 6H-SiC JFETs and ICs for Thousands of Hours at 500 °C

IEEE electron device letters, 2008-05, Vol.29 (5), p.456-459

2008

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Prolonged 500°C Operation of 100+ Transistor Silicon Carbide Integrated Circuits

Materials science forum, 2018-06, Vol.924, p.949-952

2018

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Evidence of Processing Non-Idealities in 4H-SiC Integrated Circuits Fabricated with Two Levels of Metal Interconnect

Materials Science Forum, 2016-05, Vol.858, p.1112-1116

2016

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Processing and Prolonged 500 °C Testing of 4H-SiC JFET Integrated Circuits with Two Levels of Metal Interconnect

Materials Science Forum, 2016-05, Vol.858, p.908-912

2016

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Experimentally observed electrical durability of 4H-SiC JFET ICs operating from 500 °C to 700 °C

2016 European Conference on Silicon Carbide & Related Materials (ECSCRM), 2017-05, Vol.897, p.1-1

2017

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Study of Defect Structures in 6H-SiC a/m-Plane Pseudofiber Crystals Grown by Hot-Wall CVD Epitaxy

Journal of electronic materials, 2016-04, Vol.45 (4), p.2078-2086

2016

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Electrical Characterization of a 4H-SiC JFET Wafer: DC Parameter Variations for Extreme Temperature IC Design

Materials science forum, 2015-06, Vol.821-823, p.781-784

2015

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CVD Growth of 3C-SiC on 4H/6H Mesas

Chemical vapor deposition, 2006-08, Vol.12 (8-9), p.531-540

2006

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Prolonged 500 °C Operation of 6H-SiC JFET Integrated Circuitry

Materials science forum, 2009-03, Vol.615-617, p.929-932

2009

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High Temperature Capacitive Pressure Sensor Employing a SiC Based Ring Oscillator

Materials science forum, 2012-01, Vol.717-720, p.1215-1218

2012

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Enlargement of Step-Free SiC Surfaces by Homoepitaxial Web-Growth of Thin SiC Cantilevers

Journal of applied physics, 2002-09, Vol.92 (5), p.2391-2400

2002

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Hydrogen Gas Sensors Fabricated on Atomically Flat 4H-SiC Webbed Cantilevers

Materials science forum, 2009-01, Vol.600-603, p.1199-1202

2009

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Measurements of Breakdown Field and Forward Current Stability in 3C-SiC pn Junction Diodes Grown on Step-Free 4H-SiC

Materials science forum, 2006-01, Vol.527-529, p.1335-1338

2006

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Stable Electrical Operation of 6H-SiC JFETs and ICs for Thousands of Hours at 500 ^\hbox

IEEE electron device letters, 2008-05, Vol.29 (5), p.456-459

2008

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Demonstration of 4H-SiC Digital Integrated Circuits Above 800 °C

Extreme temperature 6H-SiC JFET integrated circuit technology

Operational Testing of 4H-SiC JFET ICs for 60 Days Directly Exposed to Venus Surface Atmospheric Conditions

Towards Making SiC ICs Durable and Accessible for Use in the Most Extreme Environments (Including Venus)

Prolonged 500 °C Demonstration of 4H-SiC JFET ICs With Two-Level Interconnect

Experimental Study on Mitigation of Lifetime-Limiting Dielectric Cracking in Extreme Temperature 4H-SiC JFET Integrated Circuits

The Path Towards Realistic ASIC Electronics Deployment Into Previously Impractical Extreme Application Environments

Demonstration of 4H-SiC JFET Digital ICs Across 1000°C Temperature Range without Change to Input Voltages

Experimental and Theoretical Study of 4H-SiC JFET Threshold Voltage Body Bias Effect from 25 °C to 500 °C

Prolonged silicon carbide integrated circuit operation in Venus surface atmospheric conditions

Cross-sectional TEM and KOH-Etch Studies of Extended Defects in 3C-SiC p+n Junction Diodes Grown on 4H-SiC Mesas

Stable Electrical Operation of 6H-SiC JFETs and ICs for Thousands of Hours at 500 °C

Prolonged 500°C Operation of 100+ Transistor Silicon Carbide Integrated Circuits

Evidence of Processing Non-Idealities in 4H-SiC Integrated Circuits Fabricated with Two Levels of Metal Interconnect

Processing and Prolonged 500 °C Testing of 4H-SiC JFET Integrated Circuits with Two Levels of Metal Interconnect

Experimentally observed electrical durability of 4H-SiC JFET ICs operating from 500 °C to 700 °C

Study of Defect Structures in 6H-SiC a/m-Plane Pseudofiber Crystals Grown by Hot-Wall CVD Epitaxy

Electrical Characterization of a 4H-SiC JFET Wafer: DC Parameter Variations for Extreme Temperature IC Design

CVD Growth of 3C-SiC on 4H/6H Mesas

Prolonged 500 °C Operation of 6H-SiC JFET Integrated Circuitry

High Temperature Capacitive Pressure Sensor Employing a SiC Based Ring Oscillator

Enlargement of Step-Free SiC Surfaces by Homoepitaxial Web-Growth of Thin SiC Cantilevers

Hydrogen Gas Sensors Fabricated on Atomically Flat 4H-SiC Webbed Cantilevers

Measurements of Breakdown Field and Forward Current Stability in 3C-SiC pn Junction Diodes Grown on Step-Free 4H-SiC

Stable Electrical Operation of 6H-SiC JFETs and ICs for Thousands of Hours at 500 ^\hbox

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