UB Paderborn / Katalog / Suche / in CDI

1 – 25 von 137

Sortiert nach

Demonstration of 4H-SiC Digital Integrated Circuits Above 800 °C

IEEE electron device letters, 2017-08, Vol.38 (8), p.1082-1085

2017

Link zum Volltext

Verfügbarkeit prüfen

Extreme temperature 6H-SiC JFET integrated circuit technology

Physica status solidi. A, Applications and materials science, 2009-10, Vol.206 (10), p.2329-2345

2009

Link zum Volltext

Verfügbarkeit prüfen

Operational Testing of 4H-SiC JFET ICs for 60 Days Directly Exposed to Venus Surface Atmospheric Conditions

IEEE journal of the Electron Devices Society, 2019-01, Vol.7, p.100-110

2019

Link zum Volltext

Verfügbarkeit prüfen

Inclusion of Body Bias Effect in SPICE Modeling of 4H-SiC Integrated Circuit Resistors

Materials science forum, 2018-06, Vol.924, p.962-966

Neudeck, Philip G.

2018

Link zum Volltext

Verfügbarkeit prüfen

Towards Making SiC ICs Durable and Accessible for Use in the Most Extreme Environments (Including Venus)

Materials science forum, 2020-07, Vol.1004, p.1057-1065

2020

Link zum Volltext

Verfügbarkeit prüfen

Prolonged 500 °C Demonstration of 4H-SiC JFET ICs With Two-Level Interconnect

IEEE electron device letters, 2016-05, Vol.37 (5), p.625-628

2016

Link zum Volltext
Volltext

Experimental Study on Mitigation of Lifetime-Limiting Dielectric Cracking in Extreme Temperature 4H-SiC JFET Integrated Circuits

Materials science forum, 2020-07, Vol.1004, p.1148-1155

2020

Link zum Volltext

Verfügbarkeit prüfen

The Path Towards Realistic ASIC Electronics Deployment Into Previously Impractical Extreme Application Environments

2022 Device Research Conference (DRC), 2022, p.1-2

2022

Link zum Volltext
Volltext

Demonstration of 4H-SiC JFET Digital ICs Across 1000°C Temperature Range without Change to Input Voltages

Materials science forum, 2019-07, Vol.963, p.813-817

2019

Link zum Volltext

Verfügbarkeit prüfen

CIB: An Improved Communication Architecture for Real-Time Monitoring of Aerospace Materials, Instruments, and Sensors on the ISS

TheScientificWorld, 2013-01, Vol.2013, p.185769-12

2013

Link zum Volltext

Verfügbarkeit prüfen

Experimental and Theoretical Study of 4H-SiC JFET Threshold Voltage Body Bias Effect from 25 °C to 500 °C

Materials Science Forum, 2016-05, Vol.858, p.903-907

2016

Link zum Volltext

Verfügbarkeit prüfen

Prolonged silicon carbide integrated circuit operation in Venus surface atmospheric conditions

AIP advances, 2016-12, Vol.6 (12), p.125119-125119-7

2016

Link zum Volltext

Verfügbarkeit prüfen

Cross-sectional TEM and KOH-Etch Studies of Extended Defects in 3C-SiC p+n Junction Diodes Grown on 4H-SiC Mesas

Journal of electronic materials, 2008-05, Vol.37 (5), p.672-680

2008

Link zum Volltext

Verfügbarkeit prüfen

Stable Electrical Operation of 6H-SiC JFETs and ICs for Thousands of Hours at 500 °C

IEEE electron device letters, 2008-05, Vol.29 (5), p.456-459

2008

Link zum Volltext

Verfügbarkeit prüfen

Magnetic Field Sensing with 4H SiC Diodes: N vs P Implantation

Materials science forum, 2018-06, Vol.924, p.988-992

2018

Link zum Volltext

Verfügbarkeit prüfen

Prolonged 500°C Operation of 100+ Transistor Silicon Carbide Integrated Circuits

Materials science forum, 2018-06, Vol.924, p.949-952

2018

Link zum Volltext

Verfügbarkeit prüfen

Experimentally observed electrical durability of 4H-SiC JFET ICs operating from 500 °C to 700 °C

2016 European Conference on Silicon Carbide & Related Materials (ECSCRM), 2017-05, Vol.897, p.1-1

2017

Link zum Volltext

Verfügbarkeit prüfen

Evidence of Processing Non-Idealities in 4H-SiC Integrated Circuits Fabricated with Two Levels of Metal Interconnect

Materials Science Forum, 2016-05, Vol.858, p.1112-1116

2016

Link zum Volltext

Verfügbarkeit prüfen

Processing and Prolonged 500 °C Testing of 4H-SiC JFET Integrated Circuits with Two Levels of Metal Interconnect

Materials Science Forum, 2016-05, Vol.858, p.908-912

2016

Link zum Volltext

Verfügbarkeit prüfen

Study of Defect Structures in 6H-SiC a/m-Plane Pseudofiber Crystals Grown by Hot-Wall CVD Epitaxy

Journal of electronic materials, 2016-04, Vol.45 (4), p.2078-2086

2016

Link zum Volltext

Verfügbarkeit prüfen

Electrical Characterization of a 4H-SiC JFET Wafer: DC Parameter Variations for Extreme Temperature IC Design

Materials science forum, 2015-06, Vol.821-823, p.781-784

2015

Link zum Volltext

Verfügbarkeit prüfen

CVD Growth of 3C-SiC on 4H/6H Mesas

Chemical vapor deposition, 2006-08, Vol.12 (8-9), p.531-540

2006

Link zum Volltext

Verfügbarkeit prüfen

Site-competition epitaxy for superior silicon carbide electronics

Applied physics letters, 1994-09, Vol.65 (13), p.1659-1661

1994

Link zum Volltext

Verfügbarkeit prüfen

Growth of step-free surfaces on device-size (0001)SiC mesas

Applied physics letters, 2000-09, Vol.77 (10), p.1449-1451

2000

Link zum Volltext

Verfügbarkeit prüfen

DC Modeling of 4H-SiC nJFET Gate Length Reduction at 500°C

Materials science forum, 2022-05, Vol.1062, p.519-522

2022

Link zum Volltext

Verfügbarkeit prüfen

1 – 25 von 137

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(109)
Mit Volltextzugriff
(121)

Publikationsform

Sprache

Englisch
(137)
Japanisch
(22)

Erscheinungsjahr

n.n

Thema

Science & Technology
(65)
Technology
(58)
Materials Science
(54)
Materials Science, Multidisciplinary
(41)
Physics
(26)
Silicon Carbide
(26)
Engineering
(24)
Physical Sciences
(23)
High Temperature
(22)
Engineering, Electrical & Electronic
(20)
Jfet
(19)
Physics, Applied
(17)
Electronics
(16)
Integrated Circuits
(15)
Applied Sciences
(12)
Exact Sciences And Technology
(12)
Integrated Circuit
(12)
Materials Science, Coatings & Films
(10)
Electrical And Electronic Engineering
(9)
Semiconductor Electronics. Microelectronics. Optoelectronics. Solid State Devices
(9)

15 weitere anzeigen...

Weniger anzeigen...

Menü

Weitere Dienste

Einstellungen

Demonstration of 4H-SiC Digital Integrated Circuits Above 800 °C

Extreme temperature 6H-SiC JFET integrated circuit technology

Operational Testing of 4H-SiC JFET ICs for 60 Days Directly Exposed to Venus Surface Atmospheric Conditions

Inclusion of Body Bias Effect in SPICE Modeling of 4H-SiC Integrated Circuit Resistors

Towards Making SiC ICs Durable and Accessible for Use in the Most Extreme Environments (Including Venus)

Prolonged 500 °C Demonstration of 4H-SiC JFET ICs With Two-Level Interconnect

Experimental Study on Mitigation of Lifetime-Limiting Dielectric Cracking in Extreme Temperature 4H-SiC JFET Integrated Circuits

The Path Towards Realistic ASIC Electronics Deployment Into Previously Impractical Extreme Application Environments

Demonstration of 4H-SiC JFET Digital ICs Across 1000°C Temperature Range without Change to Input Voltages

CIB: An Improved Communication Architecture for Real-Time Monitoring of Aerospace Materials, Instruments, and Sensors on the ISS

Experimental and Theoretical Study of 4H-SiC JFET Threshold Voltage Body Bias Effect from 25 °C to 500 °C

Prolonged silicon carbide integrated circuit operation in Venus surface atmospheric conditions

Cross-sectional TEM and KOH-Etch Studies of Extended Defects in 3C-SiC p+n Junction Diodes Grown on 4H-SiC Mesas

Stable Electrical Operation of 6H-SiC JFETs and ICs for Thousands of Hours at 500 °C

Magnetic Field Sensing with 4H SiC Diodes: N vs P Implantation

Prolonged 500°C Operation of 100+ Transistor Silicon Carbide Integrated Circuits

Experimentally observed electrical durability of 4H-SiC JFET ICs operating from 500 °C to 700 °C

Evidence of Processing Non-Idealities in 4H-SiC Integrated Circuits Fabricated with Two Levels of Metal Interconnect

Processing and Prolonged 500 °C Testing of 4H-SiC JFET Integrated Circuits with Two Levels of Metal Interconnect

Study of Defect Structures in 6H-SiC a/m-Plane Pseudofiber Crystals Grown by Hot-Wall CVD Epitaxy

Electrical Characterization of a 4H-SiC JFET Wafer: DC Parameter Variations for Extreme Temperature IC Design

CVD Growth of 3C-SiC on 4H/6H Mesas

Site-competition epitaxy for superior silicon carbide electronics

Growth of step-free surfaces on device-size (0001)SiC mesas

DC Modeling of 4H-SiC nJFET Gate Length Reduction at 500°C

Suchergebnisse filtern