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Operational Testing of 4H-SiC JFET ICs for 60 Days Directly Exposed to Venus Surface Atmospheric Conditions

IEEE journal of the Electron Devices Society, 2019-01, Vol.7, p.100-110

2019

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Improved Thermal Stability Observed in Ni-Based Ohmic Contacts to n-Type SiC for High-Temperature Applications

Journal of electronic materials, 2011-04, Vol.40 (4), p.400-405

2011

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Investigation of Thermal Stability and Degradation Mechanisms in Ni-Based Ohmic Contacts to n-Type SiC for High-Temperature Gas Sensors

Journal of electronic materials, 2009-04, Vol.38 (4), p.569-573

2009

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4H-SiC Piezoresistive Pressure Sensors at 800 °C With Observed Sensitivity Recovery

IEEE electron device letters, 2015-02, Vol.36 (2), p.174-176

2015

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Pt:Ti Diffusion Barrier, Interconnect, and Simultaneous Ohmic Contacts to n- and p-Type 4H-SiC

Materials science forum, 2018-06, Vol.924, p.381-384

2018

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Prolonged 500 °C Demonstration of 4H-SiC JFET ICs With Two-Level Interconnect

IEEE electron device letters, 2016-05, Vol.37 (5), p.625-628

2016

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Oxidation behavior of stainless steels 304 and 316 under the Venus atmospheric surface conditions

Corrosion science, 2018-03, Vol.132, p.260-271

2018

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A Novel Tungsten-Nickel Alloy Ohmic Contact to SiC at 900 C

IEEE electron device letters, 2010-08, Vol.31 (8)

2010

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Development of an Extreme High Temperature n-Type Ohmic Contact to Silicon Carbide

Materials science forum, 2012, Vol.717-720, p.841-844

2012

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Prolonged 500°C Operation of 100+ Transistor Silicon Carbide Integrated Circuits

Materials science forum, 2018-06, Vol.924, p.949-952

2018

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Reliability assessment of Ti/TaSi2/Pt ohmic contacts on SiC after 1000 h at 600 °C

Journal of applied physics, 2002-05, Vol.91 (10), p.6553-6559

2002

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Experimentally observed electrical durability of 4H-SiC JFET ICs operating from 500 °C to 700 °C

2016 European Conference on Silicon Carbide & Related Materials (ECSCRM), 2017-05, Vol.897, p.1-1

2017

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Evidence of Processing Non-Idealities in 4H-SiC Integrated Circuits Fabricated with Two Levels of Metal Interconnect

Materials Science Forum, 2016-05, Vol.858, p.1112-1116

2016

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Processing and Prolonged 500 °C Testing of 4H-SiC JFET Integrated Circuits with Two Levels of Metal Interconnect

Materials Science Forum, 2016-05, Vol.858, p.908-912

2016

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Sixty Earth-Day Test of a Prototype Pt/HTCC Alumina Package in a Simulated Venus Environment

Journal of microelectronics and electronic packaging, 2019-04, Vol.16 (2), p.78-83

2019

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Novel Carbon Dioxide Microsensor Based on Tin Oxide Nanomaterial Doped With Copper Oxide

IEEE sensors journal, 2009-03, Vol.9 (3), p.235-236

2009

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Volltext

Improved Thermal Stability Observed in Ni-Based Ohmic Contacts to n-Type SiC for High-Temperature Applications: Group III Nitrides, SiC and ZnO

Journal of electronic materials, 2011, Vol.40 (4), p.400-405

2011

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Development of High Temperature SiC Based Hydrogen/Hydrocarbon Sensors with Bond Pads for Packaging

Materials science forum, 2012-01, Vol.717-720, p.1191-1194

2012

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Investigation of Thermal Stability and Degradation Mechanisms in Ni-Based Ohmic Contacts to n-Type SiC for High-Temperature Gas Sensors: Group III Nitrides, SiC, and ZnO

Journal of electronic materials, 2009, Vol.38 (4), p.569-573

2009

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Zero offset drift suppression in SiC pressure sensors at 600 °C

2010 IEEE Sensors, 2010, p.2269-2274

2010

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Volltext

Recent Progress in Extreme Environment Durable SiC JFET-R Integrated Circuit Technology

IMAPSource Proceedings, 2023-10, Vol.2023 (HiTEC, CICMT, Power)

2023

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Surface Morphology and Chemistry of 4H- and 6H-SiC after Cyclic Oxidation

Materials science forum, 2002-04, Vol.389-393, p.1101-1104

2002

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Reaction Kinetics of Thermally Stable Contact Metallization on 6H-SiC

MRS proceedings, 2000, Vol.640, Article H7.5

2000

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Investigations of the assignment of the 2190 cm−1 infrared band in polyfumaronitrile

Canadian journal of chemistry, 1985-07, Vol.63 (7), p.1960-1966

1985

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Operational Testing of 4H-SiC JFET ICs for 60 Days Directly Exposed to Venus Surface Atmospheric Conditions

Improved Thermal Stability Observed in Ni-Based Ohmic Contacts to n-Type SiC for High-Temperature Applications

Investigation of Thermal Stability and Degradation Mechanisms in Ni-Based Ohmic Contacts to n-Type SiC for High-Temperature Gas Sensors

4H-SiC Piezoresistive Pressure Sensors at 800 °C With Observed Sensitivity Recovery

Pt:Ti Diffusion Barrier, Interconnect, and Simultaneous Ohmic Contacts to n- and p-Type 4H-SiC

Prolonged 500 °C Demonstration of 4H-SiC JFET ICs With Two-Level Interconnect

Oxidation behavior of stainless steels 304 and 316 under the Venus atmospheric surface conditions

A Novel Tungsten-Nickel Alloy Ohmic Contact to SiC at 900 C

Development of an Extreme High Temperature n-Type Ohmic Contact to Silicon Carbide

Prolonged 500°C Operation of 100+ Transistor Silicon Carbide Integrated Circuits

Reliability assessment of Ti/TaSi2/Pt ohmic contacts on SiC after 1000 h at 600 °C

Experimentally observed electrical durability of 4H-SiC JFET ICs operating from 500 °C to 700 °C

Evidence of Processing Non-Idealities in 4H-SiC Integrated Circuits Fabricated with Two Levels of Metal Interconnect

Processing and Prolonged 500 °C Testing of 4H-SiC JFET Integrated Circuits with Two Levels of Metal Interconnect

Sixty Earth-Day Test of a Prototype Pt/HTCC Alumina Package in a Simulated Venus Environment

Novel Carbon Dioxide Microsensor Based on Tin Oxide Nanomaterial Doped With Copper Oxide

Improved Thermal Stability Observed in Ni-Based Ohmic Contacts to n-Type SiC for High-Temperature Applications: Group III Nitrides, SiC and ZnO

Development of High Temperature SiC Based Hydrogen/Hydrocarbon Sensors with Bond Pads for Packaging

Investigation of Thermal Stability and Degradation Mechanisms in Ni-Based Ohmic Contacts to n-Type SiC for High-Temperature Gas Sensors: Group III Nitrides, SiC, and ZnO

Zero offset drift suppression in SiC pressure sensors at 600 °C

Recent Progress in Extreme Environment Durable SiC JFET-R Integrated Circuit Technology

Surface Morphology and Chemistry of 4H- and 6H-SiC after Cyclic Oxidation

Reaction Kinetics of Thermally Stable Contact Metallization on 6H-SiC

Investigations of the assignment of the 2190 cm−1 infrared band in polyfumaronitrile

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