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Ultra-wide bandgap semiconductor Ga2O3 power diodes
Nature communications, 2022-07, Vol.13 (1), p.3900-3900, Article 3900
2022
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A novel 4H‐SiC accumulation mode MOSFET with ultra‐low specific on‐resistance and improved reverse recovery capability
IET power electronics, 2023-11, Vol.16 (14), p.2369-2377
2023
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A Novel Isolation Method for Half-Bridge Power ICs
IEEE transactions on electron devices, 2013-07, Vol.60 (7), p.2318-2323
2013
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A 600-V Super-Junction pLDMOS Utilizing Electron Current to Enhance Current Capability
IEEE transactions on electron devices, 2019-05, Vol.66 (5), p.2314-2320
2019
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A novel SiC high-k superjunction power MOSFET integrated Schottky barrier diode with improved forward and reverse performance
Journal of semiconductors, 2023-05, Vol.44 (5), p.52801-71
2023
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A 1200-V-Class Ultra-Low Specific On-Resistance SiC Lateral MOSFET With Double Trench Gate and VLD Technique
IEEE journal of the Electron Devices Society, 2022, Vol.10, p.83-88
2022
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Study on Dual Channel n-p-LDMOS Power Devices With Three Terminals
IEEE transactions on electron devices, 2013-10, Vol.60 (10), p.3508-3514
2013
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An Novel Thin Layer SOI Carrier-Stored Trench LIGBT With Enhanced Emitter Injection
IEEE journal of the Electron Devices Society, 2019, Vol.7, p.936-942
2019
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Simulation Study of a p-LDMOS With Double Electron Paths to Enhance Current Capability
IEEE electron device letters, 2018-11, Vol.39 (11), p.1700-1703
2018
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A Novel High-Voltage Pseudo-p-LDMOS Device With Three Current Conductive Paths
IEEE transactions on electron devices, 2019-01, Vol.66 (1), p.592-597
2019
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A Novel No Miller Plateau SOI-LIGBT With Low Saturation Current and Improved Switching Performance
IEEE transactions on electron devices, 2020-05, Vol.67 (5), p.1-5
2020
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A Novel GaN Superjunction FinFET Power Device With a P-Type NiO Pillar for Improved Performance
IEEE transactions on electron devices, 2023-12, Vol.70 (12), p.6452-6458
2023
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Investigation of a Novel Enhancement-Mode Al0.25Ga0.75N/AlN/AlXGa(1-X)N/GaN MIS-HEMT for High Vth and Low Ron,sp
IEEE transactions on electron devices, 2023-07, Vol.70 (7), p.3704-3710
2023
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A Novel Low on-State Voltage SOI LIGBT With Enhanced Conductivity Modulation
IEEE transactions on electron devices, 2019-11, Vol.66 (11), p.4865-4869
2019
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A new high-voltage level-shifting circuit for half-bridge power ICs
Journal of semiconductors, 2013-10, Vol.34 (10), p.155-160
2013
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Investigation of a Novel Enhancement-Mode Al 0.25 Ga 0.75 N/AlN/Al X Ga (1-X) N/GaN MIS-HEMT for High V th and Low R on,sp
IEEE transactions on electron devices, 2023-07, Vol.70 (7), p.3704-3710
2023
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Novel high-voltage, high-side and low-side power devices with a single control signal
Journal of semiconductors, 2013-09, Vol.34 (9), p.73-77
2013
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A Novel Diode-Clamped Carrier Stored Trench IGBT With Improved Performances
IEEE transactions on electron devices, 2020-01, Vol.67 (1), p.243-248
2020
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A Novel Double-RESURF SOI-LIGBT With Improved V}-} Tradeoff and Low Saturation Current
IEEE transactions on electron devices, 2020-03, Vol.67 (3), p.1059-1065
2020
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A Novel Double-RESURF SOI-LIGBT With Improved [Formula Omitted] Tradeoff and Low Saturation Current
IEEE transactions on electron devices, 2020-01, Vol.67 (3), p.1059
2020
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An Ultralow On-Specific Resistance Trench MOSFET With Multiple Stepped Accumulation Layer for Conduction
IEEE transactions on electron devices, 2021-08, Vol.68 (8), p.4022-4027
2021
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A High-Performance 4H-SiC JFET With Reverse Recovery Capability and Low Switching Loss
IEEE transactions on electron devices, 2021-10, Vol.68 (10), p.5022-5028
2021
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Analytical model and simulation study of a novel enhancement-mode Ga 2 O 3 MISFET realized by p- GaN gate
Semiconductor science and technology, 2023-06
2023
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A novel optimum variation lateral doping SiC lateral double-diffused metal oxide semiconductor with improved performance
Semiconductor science and technology, 2022-10, Vol.37 (10), p.105022
2022
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A Novel Low Turn-Off Loss and Snapback-Free Reverse-Conducting SOI-LIGBT With Integrated Polysilicon Diodes
IEEE transactions on electron devices, 2019-10, Vol.66 (10), p.4296-4301
2019
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