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Electronic energy model for single Shockley stacking fault formation in 4H-SiC crystals

Journal of applied physics, 2019-09, Vol.126 (10)

2019

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Estimation of the critical condition for expansion/contraction of single Shockley stacking faults in 4H-SiC PiN diodes

Applied physics letters, 2020-03, Vol.116 (9)

2020

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Heterogeneous chemistry: a mechanism missing in current models to explain secondary inorganic aerosol formation during the January 2013 haze episode in North China

Atmospheric chemistry and physics, 2015-02, Vol.15 (4), p.2031-2049

2015

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Exploring the severe winter haze in Beijing: the impact of synoptic weather, regional transport and heterogeneous reactions

Atmospheric chemistry and physics, 2015-03, Vol.15 (6), p.2969-2983

2015

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Current status and perspectives of ultrahigh-voltage SiC power devices

Materials science in semiconductor processing, 2018-05, Vol.78, p.43-56

2018

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Simulation analysis of high-field carrier transport in wide-bandgap semiconductors considering tunable band structures and scattering processes

Journal of applied physics, 2022-06, Vol.131 (22)

2022

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Orientation and size effects on electronic structure of rectangular cross-sectional Sn nanowires

Journal of applied physics, 2021-06, Vol.129 (22)

2021

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Nearly Ideal Breakdown Voltage Observed in Lateral p-i-n Diodes Fabricated on a SiC High-Purity Semi-Insulating Substrate

IEEE transactions on electron devices, 2023-04, Vol.70 (4), p.1-4

2023

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Carrier lifetime and breakdown phenomena in SiC power device material

Journal of physics. D, Applied physics, 2018-07, Vol.51 (36), p.363001

2018

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Theoretical analysis of Hall factor and hole mobility in p-type 4H-SiC considering anisotropic valence band structure

Journal of applied physics, 2018-06, Vol.123 (24)

2018

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Impact ionization coefficients of 4H-SiC in a wide temperature range

Japanese Journal of Applied Physics, 2019-01, Vol.58 (1), p.18001

2019

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Short minority carrier lifetimes in highly nitrogen-doped 4H-SiC epilayers for suppression of the stacking fault formation in PiN diodes

Journal of applied physics, 2016-09, Vol.120 (11)

2016

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Injected carrier concentration dependence of the expansion of single Shockley-type stacking faults in 4H-SiC PiN diodes

Journal of applied physics, 2018-01, Vol.123 (2)

2018

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Experimental Study on Short-Channel Effects in Double-Gate Silicon Carbide JFETs

IEEE transactions on electron devices, 2020-10, Vol.67 (10), p.4538-4540

2020

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Lactobacillus delbrueckii ssp. bulgaricus OLL1073R-1 feeding enhances humoral immune responses, which are suppressed by the antiviral neuraminidase inhibitor oseltamivir in influenza A virus–infected mice

Journal of dairy science, 2019-11, Vol.102 (11), p.9559-9569

2019

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Normally-off 400 °C Operation of n- and p-JFETs With a Side-Gate Structure Fabricated by Ion Implantation Into a High-Purity Semi-Insulating SiC Substrate

IEEE electron device letters, 2019-06, Vol.40 (6), p.866-869, Article 866

2019

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Impacts of energy relaxation process on quasi-ballistic hole transport capability in germanium and silicon nanowires

Journal of applied physics, 2018-01, Vol.123 (2)

2018

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Enhancement and control of carrier lifetimes in p-type 4H-SiC epilayers

Journal of applied physics, 2012-09, Vol.112 (6)

2012

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Negative-U system of carbon vacancy in 4H-SiC

Physical review letters, 2012-10, Vol.109 (18), p.187603-187603

2012

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Capacitance spectroscopy study of deep levels in Cl-implanted 4H-SiC

Journal of applied physics, 2012-09, Vol.112 (6)

2012

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Characterization of in-grown stacking faults in 4H-SiC (0001) epitaxial layers and its impacts on high-voltage Schottky barrier diodes

Applied physics letters, 2005-08, Vol.87 (5), p.051912-051912-3

2005

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Resolving the EH6/7 level in 4H-SiC by Laplace-transform deep level transient spectroscopy

Applied physics letters, 2013-04, Vol.102 (15)

2013

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Structural analysis of double-layer Shockley stacking faults formed in heavily-nitrogen-doped 4H-SiC during annealing

Journal of applied physics, 2017-07, Vol.122 (4)

2017

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Detection of minority carrier traps in p-type 4H-SiC

Applied physics letters, 2014-03, Vol.104 (9), p.92105

2014

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Electronic energy model for single Shockley stacking fault formation in 4H-SiC crystals

Estimation of the critical condition for expansion/contraction of single Shockley stacking faults in 4H-SiC PiN diodes

Heterogeneous chemistry: a mechanism missing in current models to explain secondary inorganic aerosol formation during the January 2013 haze episode in North China

Exploring the severe winter haze in Beijing: the impact of synoptic weather, regional transport and heterogeneous reactions

Current status and perspectives of ultrahigh-voltage SiC power devices

Simulation analysis of high-field carrier transport in wide-bandgap semiconductors considering tunable band structures and scattering processes

Orientation and size effects on electronic structure of rectangular cross-sectional Sn nanowires

Nearly Ideal Breakdown Voltage Observed in Lateral p-i-n Diodes Fabricated on a SiC High-Purity Semi-Insulating Substrate

Carrier lifetime and breakdown phenomena in SiC power device material

Theoretical analysis of Hall factor and hole mobility in p-type 4H-SiC considering anisotropic valence band structure

Impact ionization coefficients of 4H-SiC in a wide temperature range

Short minority carrier lifetimes in highly nitrogen-doped 4H-SiC epilayers for suppression of the stacking fault formation in PiN diodes

Injected carrier concentration dependence of the expansion of single Shockley-type stacking faults in 4H-SiC PiN diodes

Experimental Study on Short-Channel Effects in Double-Gate Silicon Carbide JFETs

Lactobacillus delbrueckii ssp. bulgaricus OLL1073R-1 feeding enhances humoral immune responses, which are suppressed by the antiviral neuraminidase inhibitor oseltamivir in influenza A virus–infected mice

Normally-off 400 °C Operation of n- and p-JFETs With a Side-Gate Structure Fabricated by Ion Implantation Into a High-Purity Semi-Insulating SiC Substrate

Impacts of energy relaxation process on quasi-ballistic hole transport capability in germanium and silicon nanowires

Enhancement and control of carrier lifetimes in p-type 4H-SiC epilayers

Negative-U system of carbon vacancy in 4H-SiC

Capacitance spectroscopy study of deep levels in Cl-implanted 4H-SiC

Characterization of in-grown stacking faults in 4H-SiC (0001) epitaxial layers and its impacts on high-voltage Schottky barrier diodes

Resolving the EH6/7 level in 4H-SiC by Laplace-transform deep level transient spectroscopy

Structural analysis of double-layer Shockley stacking faults formed in heavily-nitrogen-doped 4H-SiC during annealing

Detection of minority carrier traps in p-type 4H-SiC

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