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Extreme temperature 6H-SiC JFET integrated circuit technology

Physica status solidi. A, Applications and materials science, 2009-10, Vol.206 (10), p.2329-2345

2009

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Prolonged 500 °C Demonstration of 4H-SiC JFET ICs With Two-Level Interconnect

IEEE electron device letters, 2016-05, Vol.37 (5), p.625-628

2016

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Stable Electrical Operation of 6H-SiC JFETs and ICs for Thousands of Hours at 500 °C

IEEE electron device letters, 2008-05, Vol.29 (5), p.456-459

2008

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Prolonged 500°C Operation of 100+ Transistor Silicon Carbide Integrated Circuits

Materials science forum, 2018-06, Vol.924, p.949-952

2018

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Experimentally observed electrical durability of 4H-SiC JFET ICs operating from 500 °C to 700 °C

2016 European Conference on Silicon Carbide & Related Materials (ECSCRM), 2017-05, Vol.897, p.1-1

2017

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Evidence of Processing Non-Idealities in 4H-SiC Integrated Circuits Fabricated with Two Levels of Metal Interconnect

Materials Science Forum, 2016-05, Vol.858, p.1112-1116

2016

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Processing and Prolonged 500 °C Testing of 4H-SiC JFET Integrated Circuits with Two Levels of Metal Interconnect

Materials Science Forum, 2016-05, Vol.858, p.908-912

2016

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Fracture strength of silicon carbide microspecimens

Journal of microelectromechanical systems, 2005-10, Vol.14 (5), p.903-913

2005

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Growth of step-free surfaces on device-size (0001)SiC mesas

Applied physics letters, 2000-09, Vol.77 (10), p.1449-1451

2000

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Deep Reactive Ion Etching (DRIE) of High Aspect Ratio SiC Microstructures Using a Time-Multiplexed Etch-Passivate Process

Materials science forum, 2006-10, Vol.527-529, p.1115-1118

2006

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Prolonged 500 °C Operation of 6H-SiC JFET Integrated Circuitry

Materials science forum, 2009-03, Vol.615-617, p.929-932, Article 929

2009

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An Overview of High-Temperature Electronics and Sensor Development at NASA Glenn Research Center

Journal of turbomachinery, 2003-10, Vol.125 (4), p.658-664

2003

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High Temperature Capacitive Pressure Sensor Employing a SiC Based Ring Oscillator

Materials science forum, 2012-01, Vol.717-720, p.1215-1218

2012

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Enlargement of Step-Free SiC Surfaces by Homoepitaxial Web-Growth of Thin SiC Cantilevers

Journal of applied physics, 2002-09, Vol.92 (5), p.2391-2400

2002

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6H-SiC Lateral JFETs for Analog Integrated Circuits

Materials science forum, 2009, Vol.600-603, p.1099-1102

2009

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Stable Electrical Operation of 6H-SiC JFETs and ICs for Thousands of Hours at 500 ^\hbox

IEEE electron device letters, 2008-05, Vol.29 (5), p.456-459

2008

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Sixty Earth-Day Test of a Prototype Pt/HTCC Alumina Package in a Simulated Venus Environment

Journal of microelectronics and electronic packaging, 2019-04, Vol.16 (2), p.78-83

2019

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4H-SiC JFET Multilayer Integrated Circuit Technologies Tested up to 1000 K

ECS transactions, 2015-09, Vol.69 (11), p.113-121

2015

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Year-long 500°C Operational Demonstration of Up-scaled 4H-SiC JFET Integrated Circuits

Journal of microelectronics and electronic packaging, 2018-10, Vol.15 (4), p.163-170

2018

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Fracture Origins in Miniature Silicon Carbide Structures

Key engineering materials, 2005-01, Vol.290, p.62-69

2005

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Electrical Performance of a 32-I/O HTCC Alumina Package for High-Temperature Microelectronics

Journal of microelectronics and electronic packaging, 2017-01, Vol.14 (1), p.11-16

2017

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Fracture Strength of Single-Crystal Silicon Carbide Microspecimens at 24 °C and 1000 °C

Journal of microelectromechanical systems, 2008-02, Vol.17 (1), p.244-254

2008

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FRACTURE STRENGTH SIMULATION OF SIC MICROTENSILE SPECIMENS - ACCOUNTING FOR STOCHASTIC VARIABLES

Ceramic Engineering and Science Proceedings, 2005-01, Vol.26 (8), p.223-237

2005

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Demonstration of a Packaged Capacitive Pressure Sensor System Suitable for Jet Turbofan Engine Health Monitoring

2016 IEEE 66th Electronic Components and Technology Conference (ECTC), 2016, p.877-888

2016

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Packaging Technologies for 500°C SiC Electronics and Sensors

Materials science forum, 2012-05, Vol.717-720, p.1033-1036

2012

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Extreme temperature 6H-SiC JFET integrated circuit technology

Prolonged 500 °C Demonstration of 4H-SiC JFET ICs With Two-Level Interconnect

Stable Electrical Operation of 6H-SiC JFETs and ICs for Thousands of Hours at 500 °C

Prolonged 500°C Operation of 100+ Transistor Silicon Carbide Integrated Circuits

Experimentally observed electrical durability of 4H-SiC JFET ICs operating from 500 °C to 700 °C

Evidence of Processing Non-Idealities in 4H-SiC Integrated Circuits Fabricated with Two Levels of Metal Interconnect

Processing and Prolonged 500 °C Testing of 4H-SiC JFET Integrated Circuits with Two Levels of Metal Interconnect

Fracture strength of silicon carbide microspecimens

Growth of step-free surfaces on device-size (0001)SiC mesas

Deep Reactive Ion Etching (DRIE) of High Aspect Ratio SiC Microstructures Using a Time-Multiplexed Etch-Passivate Process

Prolonged 500 °C Operation of 6H-SiC JFET Integrated Circuitry

An Overview of High-Temperature Electronics and Sensor Development at NASA Glenn Research Center

High Temperature Capacitive Pressure Sensor Employing a SiC Based Ring Oscillator

Enlargement of Step-Free SiC Surfaces by Homoepitaxial Web-Growth of Thin SiC Cantilevers

6H-SiC Lateral JFETs for Analog Integrated Circuits

Stable Electrical Operation of 6H-SiC JFETs and ICs for Thousands of Hours at 500 ^\hbox

Sixty Earth-Day Test of a Prototype Pt/HTCC Alumina Package in a Simulated Venus Environment

4H-SiC JFET Multilayer Integrated Circuit Technologies Tested up to 1000 K

Year-long 500°C Operational Demonstration of Up-scaled 4H-SiC JFET Integrated Circuits

Fracture Origins in Miniature Silicon Carbide Structures

Electrical Performance of a 32-I/O HTCC Alumina Package for High-Temperature Microelectronics

Fracture Strength of Single-Crystal Silicon Carbide Microspecimens at 24 °C and 1000 °C

FRACTURE STRENGTH SIMULATION OF SIC MICROTENSILE SPECIMENS - ACCOUNTING FOR STOCHASTIC VARIABLES

Demonstration of a Packaged Capacitive Pressure Sensor System Suitable for Jet Turbofan Engine Health Monitoring

Packaging Technologies for 500°C SiC Electronics and Sensors

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