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Indirect tunneling in metal-insulator-metal junctions
Solid state communications, 1996-02, Vol.97 (6), p.543-547
1996

Details

Autor(en) / Beteiligte
Titel
Indirect tunneling in metal-insulator-metal junctions
Ist Teil von
  • Solid state communications, 1996-02, Vol.97 (6), p.543-547
Ort / Verlag
Oxford: Elsevier Ltd
Erscheinungsjahr
1996
Link zum Volltext
Quelle
Elsevier Journal Backfiles on ScienceDirect (DFG Nationallizenzen)
Beschreibungen/Notizen
  • I- V characteristics of realistic MIM junctions were calculated assuming a two step indirect tunneling as the major mechanism. Electronphonon broadening of the energy level of the intermediate defect states is taken into account. The theory is compared with our experimental investigations of PdMgOPd junctions and good quantitative agreement is achieved. The intermediate states are provided by the F-centers of the MgO vacancies. A consistency between the experimental data and the theory is obtained for the values of the physical parameters known from independent studies on MgO.
Sprache
Englisch
Identifikatoren
ISSN: 0038-1098
eISSN: 1879-2766
DOI: 10.1016/0038-1098(95)00605-2
Titel-ID: cdi_crossref_primary_10_1016_0038_1098_95_00605_2
Format
–
Schlagworte
A. heterojunctions, C. point defects, Condensed matter: electronic structure, electrical, magnetic, and optical properties, D. electronic transport, D. tunneling, Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures, Electronic transport in interface structures, Exact sciences and technology, Metal-insulator-metal structures, Physics

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