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Optical and structural properties of Pb1−xEuxTe/CdTe//GaAs (001) heterostructures grown by MBE
Journal of crystal growth, 2011-05, Vol.323 (1), p.140-143
2011

Details

Autor(en) / Beteiligte
Titel
Optical and structural properties of Pb1−xEuxTe/CdTe//GaAs (001) heterostructures grown by MBE
Ist Teil von
  • Journal of crystal growth, 2011-05, Vol.323 (1), p.140-143
Ort / Verlag
Amsterdam: Elsevier B.V
Erscheinungsjahr
2011
Link zum Volltext
Quelle
Elsevier ScienceDirect Journals Complete
Beschreibungen/Notizen
  • MBE growth conditions, SEM and XRD structural characterization and experimental studies of optical properties are presented for Pb1−xEuxTe/CdTe semiconductor heterostructures grown on GaAs (001) substrate with a thick CdTe buffer layer. Photoluminescence excited by pulsed YAG:Nd laser was studied in the mid-infrared spectral region for 12.5nm-thick Pb1−xEuxTe quantum wells (x=0–0.038) with 75nm-thick CdTe barriers. Increasing the Eu content up to about 4at% permitted large infrared photoluminescence tuning from 0.34 to 0.465eV due to the increase in Pb1−xEuxTe bandgap.
Sprache
Englisch
Identifikatoren
ISSN: 0022-0248
eISSN: 1873-5002
DOI: 10.1016/j.jcrysgro.2010.11.150
Titel-ID: cdi_crossref_primary_10_1016_j_jcrysgro_2010_11_150
Format
–
Schlagworte
A1. Photoluminescence, A3. Molecular beam epitaxy (MBE), A3. Quantum wells, B2. II–VI semiconductors, B2. Semiconducting lead compounds, Condensed matter: electronic structure, electrical, magnetic, and optical properties, Cross-disciplinary physics: materials science, rheology, Exact sciences and technology, Materials science, Methods of deposition of films and coatings, film growth and epitaxy, Molecular, atomic, ion, and chemical beam epitaxy, Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation, Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures, Optical properties of specific thin films, Other semiconductors, Physics, Specific materials

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