Details

Autor(en) / Beteiligte

• Usman, Muhammad
• Khan, Shahid
• Khan, Majid
• Abbas, Turab Ali

Titel

Re-crystallization of ITO films after carbon irradiation

Ist Teil von

• Applied surface science, 2017-01, Vol.392, p.863-866

Ort / Verlag

Elsevier B.V

Erscheinungsjahr

2017

Link zum Volltext

Quelle

Elsevier ScienceDirect Journals Complete

Beschreibungen/Notizen

• •Carbon irradiation on ITO destroys crystal structure until threshold ion fluence.•Carbon irradiation induced amorphization in ITO is recoverable at higher fluence.•Optical transmittance is reduced after carbon irradiation.•Electrical resistivity is increased after irradiation with carbon ions in ITO.•Bandgap is reduced with increasing fluence of carbon irradiation. 2.0MeV carbon ion irradiation effects on Indium Tin Oxide (ITO) thin films on glass substrate are investigated. The films are irradiated with carbon ions in the fluence range of 1×1013 to 1×1015ions/cm2. The irradiation induced effects in ITO are compared before and after ion bombardment by systematic study of structural, optical and electrical properties of the films. The XRD results show polycrystalline nature of un-irradiated ITO films which turns to amorphous state after 1×1013ions/cm2 fluence of carbon ions. Further increase in ion fluence to 1×1014ions/cm2 re-crystallizes the structure and retains for even higher fluences. A gradual decrease in the electrical conductivity and transmittance of irradiated samples is observed with increasing ion fluence. The band gap of the films is observed to be decreased after carbon irradiation.