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•ITO nanowires were grown by the sputtering method using a new synthesis procedure.•By changing the deposition parameters the morphology and dimensions of the nanostructures were modified.•Seed layer thickness was an important factor for obtaining branched nanowires.•SERS substrates having good performance and a high application potential were produced.•The first Raman results for our substrates are already comparable to commercial substrates.
Indium Tin oxide (ITO) nanowires were deposited by RF sputtering over oxidized silicon using ITO and Indium targets. The nanowires grew on the substrate with a catalyst layer of Indium by the vapor–liquid–solid (VLS) mechanism. Modifications in the deposition conditions affected the morphology and dimensions of the nanowires. The samples, after being covered with gold, were evaluated as surface-enhanced Raman scattering (SERS) substrates for detection of dye solutions and very good intensifications of the Raman signal were obtained. The SERS performance of the samples was also compared to that of a commercial SERS substrate and the results achieved were similar. To the best of our knowledge, this is the first time ITO nanowires were grown by the sputtering technique using oxide and metal targets.