Details

Autor(en) / Beteiligte

• Song, Shumei
• Yang, Tianlin
• Liu, Jingjing
• Xin, Yanqing
• Li, Yanhui
• Han, Shenghao

Titel

Rapid thermal annealing of ITO films

Ist Teil von

• Applied surface science, 2011-06, Vol.257 (16), p.7061-7064

Ort / Verlag

Amsterdam: Elsevier B.V

Erscheinungsjahr

2011

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• ► ITO films were deposited at room temperature. ► ITO films were treated by rapid thermal annealing (RTA) in vacuum. ► ITO films after annealed by RTA shows the lowest resistivity of 1.6 × 10 −4 Ω cm. ► High transmittance (above 90%) is exhibited by the ITO films. Tin-doped indium oxide (ITO) films with 200 nm thickness were deposited on glass substrates by DC magnetron sputtering at room temperature. And they were annealed by rapid thermal annealing (RTA) method in vacuum ambient at different temperature for 60 s. The effect of annealing temperature on the structural, electrical and optical properties of ITO films was investigated. As the RTA temperature increases, the resistivity of ITO films decreases dramatically, and the transmittance in the visible region increases obviously. The ITO film annealed at 600 °C by RTA in vacuum shows a resistivity of 1.6 × 10 −4 Ω cm and a transmittance of 92%.