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Nonsaturating large magnetoresistance in semimetals
Ist Teil von
Proceedings of the National Academy of Sciences - PNAS, 2018-10, Vol.115 (42), p.10570-10575
Ort / Verlag
United States: National Academy of Sciences
Erscheinungsjahr
2018
Link zum Volltext
Quelle
EZB Electronic Journals Library
Beschreibungen/Notizen
The rapidly expanding class of quantum materials known as topological semimetals (TSMs) displays unique transport properties, including a striking dependence of resistivity on applied magnetic field, that are of great interest for both scientific and technological reasons. So far, many possible sources of extraordinarily large nonsaturating magnetoresistance have been proposed. However, experimental signatures that can identify or discern the dominant mechanism and connect to available theories are scarce. Here we present the magnetic susceptibility (χ), the tangent of the Hall angle (tan θH
), along with magnetoresistance in four different nonmagnetic semimetals with high mobilities, NbP, TaP, NbSb₂, and TaSb₂, all of which exhibit nonsaturating large magnetoresistance (MR). We find that the distinctly different temperature dependences, χ(T), and the values of tan θH
in phosphides and antimonates serve as empirical criteria to sort the MR from different origins: NbP and TaP are uncompensated semimetals with linear dispersion, in which the nonsaturating magnetoresistance arises due to guiding center motion, while NbSb₂ and TaSb₂ are compensated semimetals, with a magnetoresistance emerging from nearly perfect charge compensation of two quadratic bands. Our results illustrate how a combination of magnetotransport and susceptibility measurements may be used to categorize the increasingly ubiquitous nonsaturating large magnetoresistance in TSMs.