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Dual E‐ and H‐field control of microwave performance with enhanced ferromagnetic resonance (FMR) tunability has been demonstrated in microwave composites FeGaB/PZN‐PT(011). A voltage‐impulse‐induced non‐volatile magnetization switching was also realized in this work, resulting from the hysteretic type of phase transition in PZN‐PT(011) at high electric fields. The results provide a framework for developing lightweight, energy efficient, voltage‐tunable RF/microwave devices.