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Semiconductor International, 2006-12, Vol.29 (13), p.64
2006

Details

Autor(en) / Beteiligte
Titel
Texas Instruments and Chartered Semiconductor Manufacturing
Ist Teil von
  • Semiconductor International, 2006-12, Vol.29 (13), p.64
Ort / Verlag
Newton: Reed Business Information, Inc. (US)
Erscheinungsjahr
2006
Link zum Volltext
Quelle
Nexis Uni
Beschreibungen/Notizen
  • When Semiconductor International created the Top Fab Awards in 1991, our staff wanted to highlight those fabs that were making a difference in the semiconductor industry. Now, 15 years later, the tradition lives on. Two fabs were chosen as the recipients of the 2006 Top Fab Award: DMOS6, a Texas Instruments fab located in Dallas, and Singapore's Chartered Semiconductor Manufacturing Fab 7. Dallas Metal Oxide Semiconductor Fab No. 6, or DMOS6, is a 190,000 ft-squared facility built in 1996 and cleanroom certified in 2000. The products manufactured in this facility include a wide range of high-performance, low-power DSP products and application-specific processors. Working under a team motto of "Together We Win!!!" Chartered Semiconductor Manufacturing has done just that. Fab 7 is a state-of-the-art facility. The fab was designed to scale to 45 nm technology and beyond.

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