Details

Autor(en) / Beteiligte

• Kaloyeros, Alain E
• Thomas, Michael E
• Norman, John
• Sullivan, John J

Titel

Aluminum interconnects for ULSI: The CVD route

Ist Teil von

• Semiconductor international, 1996-11, Vol.19 (12), p.127

Ort / Verlag

Newton: Reed Business Information, a division of Reed Elsevier, Inc

Erscheinungsjahr

1996

Link zum Volltext

Beschreibungen/Notizen

• Two strategies that could potentially provide low temperature, integrated chemical vapor deposition (CVD) processes for specular and pure aluminum alloys at thicknesses up to 1 micrometer are described. The strategies can also conformally fill subquarter micron structures at growth rates in excess of 2000 Angstrom units per minute. The first strategy relies on the use of CVD-grown ultra thin copper grown on titanium nitride (or other desirable diffusion barriers) as nucleation layer, or seeding layer, for aluminum CVD. The 2nd strategy relies on the use of low power density hydrogen plasmas.