Details

Autor(en) / Beteiligte

• Schmid, P. E.

Titel

Optical absorption in heavily doped silicon

Ist Teil von

• Physical review. B, Condensed matter, 1981-05, Vol.23 (10), p.5531-5536

Erscheinungsjahr

1981

Link zum Volltext

Quelle

APS Digital Backfile Archive (DFG Nationallizenzen)

Beschreibungen/Notizen

• Optical-absorption measurements at 300 and 4 deg K on a series of heavily doped Si:As and Si:B samples are reported. The interband contribution is isolated and confronted with the predictions of an electron-gas calculation. Disorder effects are observed and impurity-derived states are found to play a significant role, invalidating the electron-gas model at concentrations # < 1020 cm -- 3. The gap shrinkage follows a critical behavior, going to zero at the insulator -- metal transition and varying approx. linearly with concentration at high doping. The discrepancy between device-based and optical determinations of the gap shrinkage is discussed.26 refs.--AA