Journal of materials science, 2009-10, Vol.44 (20), p.5673-5681
2009
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Details
- Autor(en) / Beteiligte
- Titel
- Oxidation resistance of hafnium diboride—silicon carbide from 1400 to 2000 °C
- Ist Teil von
- Journal of materials science, 2009-10, Vol.44 (20), p.5673-5681
- Ort / Verlag
- Boston: Springer US
- Erscheinungsjahr
- 2009
- Quelle
- Alma/SFX Local Collection
- Beschreibungen/Notizen
- Oxidation resistance tests were carried out on HfB 2 -20 vol.% SiC prepared by spark plasma sintering. The dense samples were exposed from 1400 to 2000 °C in an ambient atmosphere for 1 h. For comparison, the same material was tested using an arc jet to simulate an atmospheric reentry environment. The oxidation properties of the samples were determined by measuring the weight gain per unit surface area and the thicknesses of the oxide scale. The oxide scale consists of a SiO 2 outer layer, porous HfO 2 layers, and an HfB 2 layer depleted in SiC. A transition in HfO 2 morphology from equixed to columnar and a decrease in SiO 2 viscosity between 1800 and 1900 °C accompanied a rapid increase in weight gain and scale thickness.
- Sprache
- Englisch
- Identifikatoren
- ISSN: 0022-2461eISSN: 1573-4803DOI: 10.1007/s10853-009-3799-7Titel-ID: cdi_proquest_journals_2259669088
- Format
- –
- Schlagworte
- Atmospheric entry, Characterization and Evaluation of Materials, Chemistry and Materials Science, Classical Mechanics, Crystallography and Scattering Methods, Gain, Hafnium, Hafnium compounds, Hafnium oxide, Materials Science, Morphology, Oxidation, Oxidation resistance, Oxides, Plasma sintering, Polymer Sciences, Reentry, Scale (corrosion), Silicon carbide, Silicon dioxide, Solid Mechanics, Spark plasma sintering, Thickness, Weight gain measurement