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Characterization of polycrystalline and amorphous silicon films by angle-resolved light scattering
Ist Teil von
Journal of physics. D, Applied physics, 1993-02, Vol.26 (2), p.271-280
Ort / Verlag
Bristol: IOP Publishing
Erscheinungsjahr
1993
Link zum Volltext
Quelle
Alma/SFX Local Collection
Beschreibungen/Notizen
Angle-resolved light scatter was used to characterize the lateral structure of the surface corrugations. Angle-integrated light scatter was used to estimate the root mean square (RMS) surface roughness. Scanning electron microscopy and resistivity measurements were also used. The advantage of depositing amorphous silicon is to prevent formation of short range roughness which is more detrimental to the Si/SiO\+v\2\-v\ interface quality than long range waviness. (Original abstract-amended)