Sie befinden Sich nicht im Netzwerk der Universität Paderborn. Der Zugriff auf elektronische Ressourcen ist gegebenenfalls nur via VPN oder Shibboleth (DFN-AAI) möglich. mehr Informationen...

Details

Autor(en) / Beteiligte
Titel
Innovative front end processing for next generation CIS module production
Ist Teil von
  • Japanese Journal of Applied Physics, 2015-08, Vol.54 (8S1), p.8
Ort / Verlag
The Japan Society of Applied Physics
Erscheinungsjahr
2015
Link zum Volltext
Quelle
Alma/SFX Local Collection
Beschreibungen/Notizen
  • The successful implementation of two new process steps into an existing Cu(In,Ga)(Se,S)2 (CIS) production line was achieved. One, a newly developed back contact, aims for a better process control, as far as the transition of the metallic back contact to a selenide/metal bi-layer during CIS-formation is concerned. This was done by the introduction of a corrosion resistant barrier layer, which reliably stops chalcogenide diffusion from the top. By doing so, a back contact layer is obtained, with well defined properties in which the functionalities of the back electrode now is divided between two separated layers. The other development presented in this paper, tackles the complexity of CIS-module production and the interferences between the different processes required. By shifting the P1-scribing process after i-ZnO deposition, the process sequence for CIS is simplified and it will be shown that this new P1i exhibits superior properties as far as CIS morphology and groove quality is concerned.
Sprache
Englisch
Identifikatoren
ISSN: 0021-4922
eISSN: 1347-4065
DOI: 10.7567/JJAP.54.08KC12
Titel-ID: cdi_iop_journals_10_7567_JJAP_54_08KC12

Weiterführende Literatur

Empfehlungen zum selben Thema automatisch vorgeschlagen von bX