Sie befinden Sich nicht im Netzwerk der Universität Paderborn. Der Zugriff auf elektronische Ressourcen ist gegebenenfalls nur via VPN oder Shibboleth (DFN-AAI) möglich.
mehr Informationen...
Theoretical analysis for AlGaN avalanche photodiodes with mesa and field plate structureProject supported by the Natural Science Research Project of Anhui University, China (Grant No. KJ2019A0644), the National Natural Science Foundation of China (Grant Nos. 61634002 and 61804089), the Natural Science Alliance Foundation, China (Grant No. U1830109), the Natural Science Foundation of Anhui Province, China (Grant No. 1708085MF149), the Chuzhou University Research Project, China (Grant No. zrjz2019
Ist Teil von
Chinese physics B, 2020-07, Vol.29 (8)
Ort / Verlag
Chinese Physical Society and IOP Publishing Ltd
Erscheinungsjahr
2020
Link zum Volltext
Quelle
Alma/SFX Local Collection
Beschreibungen/Notizen
To suppress the electric field crowding at sidewall and improve the detection sensitivity of the AlGaN separate absorption and multiplication (SAM) avalanche photodiodes (APDs), we propose the new AlGaN APDs structure combining a large-area mesa with a field plate (FP). The simulated results show that the proposed AlGaN APDs exhibit a significant increase in avalanche gain, about two orders of magnitude, compared to their counterparts without FP structure, which is attributed to the suppression of electric field crowding at sidewall of multiplication layer and the reduction of the maximum electric field at the p-type GaN sidewall in p-n depletion region. Meanwhile, the APDs can produce an obviously enhanced photocurrent due to the increase in cross sectional area of multiplication region.