Details

Autor(en) / Beteiligte

• Liu, Kang
• Zhao, Jiwen
• Sun, Huarui
• Guo, Huaixin
• Dai, Bing
• Zhu, Jiaqi

Titel

Thermal characterization of GaN heteroepitaxies using ultraviolet transient thermoreflectanceProject supported by the Young Scientists Fund of the National Natural Science Foundation of China (Grant No. 61604049) and the Shenzhen Municipal Research Project (Grant No. JCYJ20160531192714636)

Ist Teil von

• Chinese physics B, 2019-06, Vol.28 (6)

Ort / Verlag

Chinese Physical Society and IOP Publishing Ltd

Erscheinungsjahr

2019

Link zum Volltext

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• Thermal transport properties of GaN heteroepitaxial structures are of critical importance for the thermal management of high-power GaN electronic and optoelectronic devices. Ultraviolet (UV) lasers are employed to directly heat and sense the GaN epilayers in the transient thermoreflectance (TTR) measurement, obtaining important thermal transport properties in different GaN heterostructures, which include a diamond thin film heat spreader grown on GaN. The UV TTR technique enables rapid and non-contact thermal characterization for GaN wafers.