Details

Autor(en) / Beteiligte

• Xu, Ming-sheng
• Ge, Lei
• Han, Ming-ming
• Huang, Jing
• Xu, Hua-yong
• Yang, Zai-xing

Titel

Recent advances in Ga-based solar-blind photodetectorsProject supported by the National Key Reserch and Development Program of China (Grant No. 2017YFA0305500), the Fund from Science Technology and Innovation Committee of Shenzhen Municipality, China (Grant No. JCYJ20170307093131123), the National Natural Science Foundation of China (Grant No. 61504044), the Key Research and Development Program of Shandong Province, China (Grant Nos. 2018GGX101027, 2017GGX201002, 2017CXGC0412, 2016ZDJS09A05, and

Ist Teil von

• Chinese physics B, 2019-02, Vol.28 (2)

Ort / Verlag

Chinese Physical Society and IOP Publishing Ltd

Erscheinungsjahr

2019

Link zum Volltext

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• Solar-blind ultraviolet photodetectors have many advantages, such as low false alarm rates, the ability to detect weak signals, and high signal-to-noise ratios. Among the various functional solar-blind ultraviolet photodetectors, Ga-based alloys of AlGaN and Ga2O3 are the most commonly adopted channel semiconductor materials and have attracted extensive research attention in the past decades. This review presents an overview of the recent progress in Ga-based solar-blind photodetectors. In case of AlGaN-based solar-blind ultraviolet photodetectors, the response properties can be improved by optimizing the AlN nucleation layer and designing the avalanche structure. On the other hand, we also discuss the morphology and growth methods of Ga2O3 nanomaterials and their effect on the performance of the corresponding solar-blind photodetectors. The mechanically exfoliated Ga2O3 flakes show good potential for ultraviolet detection. Also, Ga2O3 nanoflowers and nanowires reveal perfect response to ultraviolet light. Finally, the challenges and future development of Ga-based functional solar-blind ultraviolet photodetectors are summarized.