Details

Autor(en) / Beteiligte

• Li, Xiang
• Zhao, De-Gang
• Jiang, De-Sheng
• Yang, Jing
• Chen, Ping
• Liu, Zong-Shun
• Zhu, Jian-Jun
• Liu, Wei
• He, Xiao-Guang
• Li, Xiao-Jing
• Liang, Feng
• Liu, Jian-Ping
• Zhang, Li-Qun
• Yang, Hui
• Zhang, Yuan-Tao
• Du, Guo-Tong
• Long, Heng
• Li, Mo

Titel

Analysis of localization effect in blue-violet light emitting InGaN/GaN multiple quantum wells with different well widths Project supported by the National Key Research and Development Program of China (Grant No. 2016YFB0401801), the National Natural Science Foundation of China (Grant Nos. 61674138, 61674139, 61604145, 61574135, 61574134, 61474142, 61474110, 61377020, and 61376089), Science Challenge Project, China (Grant No. JCKY2016212A503), and One Hundred Person Project of the Chinese Academ

Ist Teil von

• Chinese physics B, 2017-01, Vol.26 (1)

Ort / Verlag

Chinese Physical Society and IOP Publishing Ltd

Erscheinungsjahr

2017

Link zum Volltext

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• Four blue-violet light emitting InGaN/GaN multiple quantum well (MQW) structures with different well widths are grown by metal-organic chemical vapor deposition. The carrier localization effect in these samples is investigated mainly by temperature-dependent photoluminescence measurements. It is found that the localization effect is enhanced as the well width increases from 1.8 nm to 3.6 nm in our experiments. The temperature induced PL peak blueshift and linewidth variation increase with increasing well width, implying that a greater amplitude of potential fluctuation as well as more localization states exist in wider wells. In addition, it is noted that the broadening of the PL spectra always occurs mainly on the low-energy side of the PL spectra due to the temperature-induced band-gap shrinkage, while in the case of the widest well, a large extension of the spectral curve also occurs in the high energy sides due to the existence of more shallow localized centers.