Details

Autor(en) / Beteiligte

• Liu, Shuang-Tao
• Zhao, De-Gang
• Yang, Jing
• Jiang, De-Sheng
• Liang, Feng
• Chen, Ping
• Zhu, Jian-Jun
• Liu, Zong-Shun
• Li, Xiang
• Liu, Wei
• Xing, Yao
• Zhang, Li-Qun

Titel

The residual C concentration control for low temperature growth p-type GaN Project supported by the National Key Research and Development Program of China (Grant Nos. 2016YFB0401801 and 2016YFB0400803), the National Natural Science Foundation of China (Grant Nos. 61674138, 61674139, 61604145, 61574135, 61574134, 61474142, 61474110, 61377020, and 61376089), the Science Challenge Project (Grant No. JCKY2016212A503), and Beijing Municipal Science and Technology Project (Grant No. Z161100002116037)

Ist Teil von

• Chinese physics B, 2017-09, Vol.26 (10)

Ort / Verlag

Chinese Physical Society and IOP Publishing Ltd

Erscheinungsjahr

2017

Link zum Volltext

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• In this work, the influence of C concentration to the performance of low temperature growth p-GaN is studied. Through analyses, we have confirmed that the C impurity has a compensation effect to p-GaN. At the same time we have found that several growth and annealing parameters have influences on the residual C concentration: (i) the C concentration decreases with the increase of growth pressure; (ii) we have found there exists a Ga memory effect when changing the Cp2Mg flow which will lead the growth rate and C concentration increase along the increase of Cp2Mg flow; (iii) annealing outside of metal-organic chemical vapor deposition (MOCVD) could decrease the C concentration while in situ annealing in MOCVD has an immobilization role to C concentration.