Details

Autor(en) / Beteiligte

• Li, Ping
• Guo, Jingwei
• Lin, Zhi
• Hu, Shengdong
• Shi, Cong
• Tang, Fang

Titel

A Novel Approach to Inactivate the Body p-i-n Diode of SiC MOSFET by Using the Normally-OFF JFET

Ist Teil von

• IEEE transactions on electron devices, 2021-04, Vol.68 (4), p.1784-1790

Ort / Verlag

New York: IEEE

Erscheinungsjahr

2021

Link zum Volltext

• Volltext

Quelle

IEEE Electronic Library (IEL)

Beschreibungen/Notizen

• A novel approach to inactivate the body p-i-n diode of silicon carbide (SiC) MOSFET is proposed in this article. It features a normally-OFF JFET structure embedded medially between the two p-well regions in the <inline-formula> <tex-math notation="LaTeX">{z} </tex-math></inline-formula>-direction. When the SiC MOSFET operates in the first quadrant, the normally-OFF JFET is pinched-off, guaranteeing the excellent fundamental performance of the SiC MOSFET. While when the SiC MOSFET serves as the freewheeling diode, the channel of the normally-OFF JFET is turned on, which provides a unipolar current conduction path with low cut-in voltage, thereby inactivating the body p-i-n diode. TCAD simulation results show that, in comparison with the double trench SiC MOSFET, the cut-in voltage and the reverse recovery charge of the proposed SiC MOSFET could be reduced by 51.6% and 52.2%, respectively.