Autor(en)
Li, Ping; Guo, Jingwei; Lin, Zhi; Hu, Shengdong; Shi, Cong; Tang, Fang
Titel
A Novel Approach to Inactivate the Body p-i-n Diode of SiC MOSFET by Using the Normally-OFF JFET
Teil von
  • IEEE transactions on electron devices, 2021-04, Vol.68 (4), p.1784-1790
Ort / Verlag
PISCATAWAY: IEEE
Links zum Volltext
Quelle
IEEE Electronic Library (IEL) Journals
Beschreibungen
A novel approach to inactivate the body p-i-n diode of silicon carbide (SiC) MOSFET is proposed in this article. It features a normally-OFF JFET structure embedded medially between the two p-well regions in the <inline-formula> <tex-math notation="LaTeX">{z} </tex-math></inline-formula>-direction. When the SiC MOSFET operates in the first quadrant, the normally-OFF JFET is pinched-off, guaranteeing the excellent fundamental performance of the SiC MOSFET. While when the SiC MOSFET serves as the freewheeling diode, the channel of the normally-OFF JFET is turned on, which provides a unipolar current conduction path with low cut-in voltage, thereby inactivating the body p-i-n diode. TCAD simulation results show that, in comparison with the double trench SiC MOSFET, the cut-in voltage and the reverse recovery charge of the proposed SiC MOSFET could be reduced by 51.6% and 52.2%, respectively.
Format
Sprache(n)
Englisch
Identifikator(en)
ISSN: 0018-9383
ISSN: 1557-9646
DOI: 10.1109/TED.2021.3059393

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