Autor(en)
Lyu, Gang; Wang, Yuru; Wei, Jin; Zheng, Zheyang; Sun, Jiahui; Zhang, Long; Chen, Kevin J
Titel
A Normally-off Copackaged SiC-JFET/GaN-HEMT Cascode Device for High-Voltage and High-Frequency Applications
Teil von
  • IEEE transactions on power electronics, 2020-09, Vol.35 (9), p.9669-9679
Ort / Verlag
PISCATAWAY: IEEE
Links zum Volltext
Quelle
IEEE Electronic Library (IEL) Journals
Beschreibungen
A 1200-V/100-mΩ silicon carbide (SiC) junction field-effect-transistor (JFET)/ gallium nitride (GaN) high-electron-mobility-transistor (HEMT) hybrid power switch is demonstrated, which features a flip-chip copackaged cascode configuration incorporating a vertical SiC JFET and a lateral GaN-HEMT. The high-voltage SiC-JFET provides the high-voltage blocking capability while the low-voltage GaN-HEMT enables the normally- off gate control with superior switching characteristics. Compared to conventional SiC-JFET/Si- mosfet cascode devices, the SiC-JFET/GaN-HEMT cascode device exhibits fast switching speed, which has been validated by systematic characterizations including static/dynamic device-level measurements and board-level hard-switching tests. Meanwhile, the device is free from several notorious issues of high-voltage GaN power transistors such as dynamic on -state resistance degradation and threshold voltage shift. Such a wide-bandgap semiconductor-based hybrid switch is suitable to be deployed in high-power and high-efficiency power conversion systems.

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