Autor(en)
Wang, Hengyu; Wang, Ce; Wang, Baozhu; Ren, Na; Sheng, Kuang
Titel
4H-SiC Super-Junction JFET: Design and Experimental Demonstration
Teil von
  • IEEE electron device letters, 2020-03, Vol.41 (3), p.445-448
Ort / Verlag
PISCATAWAY: IEEE
Links zum Volltext
Quelle
IEEE Electronic Library (IEL) Journals
Beschreibungen
The silicon carbide (SiC) super-junction JFET was designed, simulated and fabricated through trench-etching and sidewall-implantation technology, which avoids the expensive epi-regrowth process. The fabricated super-junction JFET achieves a breakdown voltage of 1000V with specific on-resistance of 1.3mΩ ·cm 2 . The threshold voltage (V th ) is stable over a wide range of temperature with less than 0.2V shift from 25°C to 175°C. These results demonstrate that the trench-etching and sidewall-implantation technology is a promising option to fabricate SiC super-junction devices. These devices could have great potential for future power electronics.
Format
Sprache(n)
Englisch
Identifikator(en)
ISSN: 0741-3106
ISSN: 1558-0563
DOI: 10.1109/LED.2020.2969683

Weiterführende Literatur

Empfehlungen zum selben Thema automatisch vorgeschlagen von bX
Die Universität der Informationsgesellschaft