Details

Autor(en) / Beteiligte

• Li, Yuzhi
• Lan, Linfeng
• Hu, Shiben
• Gao, Peixiong
• Dai, Xingqiang
• He, Penghui
• Li, Xifeng
• Peng, Junbiao

Titel

Fully Printed Top-Gate Metal-Oxide Thin-Film Transistors Based on Scandium-Zirconium-Oxide Dielectric

Ist Teil von

• IEEE transactions on electron devices, 2019-01, Vol.66 (1), p.445-450

Ort / Verlag

New York: IEEE

Erscheinungsjahr

2019

Quelle

IEL

Beschreibungen/Notizen

• The fully inkjet-printed top-gate metal-oxide thin-film transistors (TFTs) with excellent electrical performance are realized with the gate dielectric layer of scandium zirconium oxide (Sc 1 Zr 1 O x ). It is found that adding of nitrate-based scandium oxide (ScO x ) precursor into the chloride ligand-based zirconium oxide (ZrO x ) precursor will reduce the corrosivity of the mixed solution, and the incorporation of Zr ions into ScO x will suppress the hydrogen-ion migration and eliminate the acceptor-like traps in pure ScO x . The fully printed indium gallium oxide (InGaO) TFTs based on Sc 1 Zr 1 O x dielectric exhibited an average mobility of 10.8 cm<inline-formula> <tex-math notation="LaTeX">^{{2}} \text{V}^{\vphantom {R^{'}}-{1}} \cdot \text{s}^{-{1}} </tex-math></inline-formula>, a highest mobility of 12.9 cm<inline-formula> <tex-math notation="LaTeX">^{{2}} \cdot \text{V}^{-{1}} \cdot \text{s}^{-{1}} </tex-math></inline-formula>, negligible hysteresis, and excellent stability under both the negative and positive bias stresses. In addition, a resistor-loaded inverter was fabricated using a fully printed InGaO TFT, which exhibited the full swing characteristics and a maximum gain of 5 at 2 V.