Autor(en)
Kotzea, Simon; Debald, Arne; Heuken, Michael; Kalisch, Holger; Vescan, Andrei
Titel
Demonstration of a GaN-Based Vertical-Channel JFET Fabricated by Selective-Area Regrowth
Teil von
  • IEEE transactions on electron devices, 2018-12, Vol.65 (12), p.5329-5336
Ort / Verlag
PISCATAWAY: IEEE
Links zum Volltext
Quelle
IEEE Electronic Library (IEL) Journals
Beschreibungen
One of the key challenges for vertical GaN power devices is their complex fabrication process. We present the first experimental realization of a GaN-based vertical-channel junction field-effect transistor. A selective-area regrowth process was developed to epitaxially form the lateral p-n junction used for current control in the channel. First devices fabricated show an <inline-formula> <tex-math notation="LaTeX">{R}_{\mathrm{ON}}=\textsf {2.36}\,\,\text {m}\Omega \text {cm}^{{2}} </tex-math></inline-formula> and demonstrate basic current modulation. We discuss the device characteristics and limitations. Based on a TCAD model fitted to the experimental data, we explore the design rules for future device implementation.
Format
Sprache(n)
Englisch
Identifikator(en)
ISSN: 0018-9383
ISSN: 1557-9646
DOI: 10.1109/TED.2018.2875534

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