Details

Autor(en) / Beteiligte

• Spry, David J.
• Neudeck, Philip G.
• Liangyu Chen
• Lukco, Dorothy
• Chang, Carl W.
• Beheim, Glenn M.

Titel

Prolonged 500 °C Demonstration of 4H-SiC JFET ICs With Two-Level Interconnect

Ist Teil von

• IEEE electron device letters, 2016-05, Vol.37 (5), p.625-628

Ort / Verlag

New York: IEEE

Erscheinungsjahr

2016

Link zum Volltext

• Volltext

Quelle

IEEE/IET Electronic Library (IEL)

Beschreibungen/Notizen

• This letter reports fabrication and testing of integrated circuits (ICs) with two levels of interconnect that consistently achieve greater than 1000 h of stable electrical operation at 500°C in air ambient. These ICs are based on 4H-SiC junction field-effect transistor technology that integrates hafnium ohmic contacts with TaSi 2 interconnects and SiO 2 and Si 3 N 4 dielectric layers over ~1-μm scale vertical topology. Following initial burn-in, important circuit parameters remain stable within 15% for more than 1000 h of 500°C operational testing. These results advance the technology foundation for realizing long-term durable 500°C ICs with increased functional capability for sensing and control combustion engine, planetary, deep-well drilling, and other harsh-environment applications.