Autor(en)
Spry, David J; Neudeck, Philip G; Liangyu Chen; Lukco, Dorothy; Chang, Carl W; Beheim, Glenn M
Titel
Prolonged 500 °C Demonstration of 4H-SiC JFET ICs With Two-Level Interconnect
Teil von
  • IEEE electron device letters, 2016-05, Vol.37 (5), p.625-628
Ort / Verlag
IEEE
Links zum Volltext
Quelle
IEEE Electronic Library (IEL) Journals
Beschreibungen
This letter reports fabrication and testing of integrated circuits (ICs) with two levels of interconnect that consistently achieve greater than 1000 h of stable electrical operation at 500°C in air ambient. These ICs are based on 4H-SiC junction field-effect transistor technology that integrates hafnium ohmic contacts with TaSi 2 interconnects and SiO 2 and Si 3 N 4 dielectric layers over ~1-μm scale vertical topology. Following initial burn-in, important circuit parameters remain stable within 15% for more than 1000 h of 500°C operational testing. These results advance the technology foundation for realizing long-term durable 500°C ICs with increased functional capability for sensing and control combustion engine, planetary, deep-well drilling, and other harsh-environment applications.
Format
Sprache(n)
Englisch
Identifikator(en)
ISSN: 0741-3106
ISSN: 1558-0563
DOI: 10.1109/LED.2016.2544700

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