Spry, David J; Neudeck, Philip G; Liangyu Chen; Lukco, Dorothy; Chang, Carl W; Beheim, Glenn M
Prolonged 500 °C Demonstration of 4H-SiC JFET ICs With Two-Level Interconnect
Teil von
  • IEEE electron device letters, 2016-05, Vol.37 (5), p.625-628
Ort / Verlag
Links zum Volltext
IEEE Electronic Library (IEL) Journals
This letter reports fabrication and testing of integrated circuits (ICs) with two levels of interconnect that consistently achieve greater than 1000 h of stable electrical operation at 500°C in air ambient. These ICs are based on 4H-SiC junction field-effect transistor technology that integrates hafnium ohmic contacts with TaSi 2 interconnects and SiO 2 and Si 3 N 4 dielectric layers over ~1-μm scale vertical topology. Following initial burn-in, important circuit parameters remain stable within 15% for more than 1000 h of 500°C operational testing. These results advance the technology foundation for realizing long-term durable 500°C ICs with increased functional capability for sensing and control combustion engine, planetary, deep-well drilling, and other harsh-environment applications.
ISSN: 0741-3106
ISSN: 1558-0563
DOI: 10.1109/LED.2016.2544700

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