Details

Autor(en) / Beteiligte

• Zhihao Lao
• Thiede, A.
• Nowotny, U.
• Lienhart, H.
• Hurm, V.
• Schlechtweg, M.
• Hornung, J.
• Bronner, W.
• Kohler, K.
• Hulsmann, A.
• Raynor, B.
• Jakobus, T.

Titel

40-Gb/s high-power modulator driver IC for lightwave communication systems

Ist Teil von

• IEEE journal of solid-state circuits, 1998-10, Vol.33 (10), p.1520-1526

Ort / Verlag

IEEE

Erscheinungsjahr

1998

Link zum Volltext

• Volltext

Quelle

IEL

Beschreibungen/Notizen

• A monolithic integrated modulator driver with a data decision function for high-speed optical fiber links is presented. The integrated circuit (IC) was manufactured in a 0.2-/spl mu/m gate length AlGaAs/InGaAs high electron mobility transistor technology with an f/sub T/ of 68 GHz. The modulator driver IC features differential configuration and operates up to 40 Gb/s with a clock phase margin of 210/spl deg/ and an output voltage swing of 2.9 V/sub p-p/ at each output. The maximum slew rate of the output signal is 200 mV/ps. The power dissipation of the circuit is 1.6 W using a single supply voltage of -5 V.