Autor(en)
Tsuji, Hiroshi; Nakata, Mitsuru; Nakajima, Yoshiki; Takei, Tatsuya; Fujisaki, Yoshihide; Shimidzu, Naoki; Yamamoto, Toshihiro
Titel
Development of Back-Channel Etched In-W-Zn-O Thin-Film Transistors
Teil von
  • Journal of display technology, 2016-03, Vol.12 (3), p.228-231
Ort / Verlag
PISCATAWAY: IEEE
Links zum Volltext
Quelle
IEEE Electronic Library (IEL) Journals
Beschreibungen
Back-channel etched (BCE) thin-film transistors (TFTs) are developed using a novel oxide semiconducting material, In-W-Zn-O (IWZO). A bi-layer structure for the IWZO oxide semiconductor layer is proposed to realize both high resistance to back-channel etching damage and high TFT mobility. The developed IWZO BCE-TFTs exhibit high mobilities of up to 20.2 cm 2 /V·s.
Format
Sprache(n)
Englisch
Identifikator(en)
ISSN: 1551-319X
ISSN: 1558-9323
DOI: 10.1109/JDT.2015.2445321

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