Details

Autor(en) / Beteiligte

• Hachemi, M. B.
• Salem, B.
• Consonni, V.
• Roussel, H.
• Garraud, A.
• Lefevre, G.
• Labau, S.
• Basrour, S.
• Bsiesy, A.

Titel

Study of structural and electrical properties of ferroelectric HZO films obtained by single-target sputtering

Ist Teil von

• AIP advances, 2021-08, Vol.11 (8), p.085004-085004-8

Ort / Verlag

Melville: American Institute of Physics

Erscheinungsjahr

2021

Link zum Volltext

Quelle

EZB Free E-Journals

Beschreibungen/Notizen

• In this work, we study the structural and electrical properties of Hafnium Zirconium Oxide (HZO) thin films deposited by Hf0.5Zr0.5O2 single-target sputtering to fabricate a TiN/(14-/22 nm-thick) HZO/TiN stack. The structural analysis of the HZO thin films performed by in situ x-ray diffraction upon thermal annealing shows the formation of the HZO orthorhombic phase at annealing temperatures as low as 370 °C. X-ray photoelectron spectroscopy interestingly reveals an identical chemical composition of the deposited HZO thin films and the sputtered target, i.e., an Hf:Zr ratio of 1:1. The current–voltage characteristic of the TiN/HZO/TiN stack shows a current density of 10−5 A/cm2 at an applied electric field of 1 MV/cm, which, being rather low, gives a strong indication of the good electrical quality of the HZO layer. Finally, a butterfly-like capacitance–voltage loop is obtained on the TiN/HZO/TiN stack, indicating a ferroelectric behavior of the HZO layer.