Details

Autor(en) / Beteiligte

• Bouaziz, Jordan
• Romeo, Pedro Rojo
• Baboux, Nicolas
• Vilquin, Bertrand

Titel

Huge Reduction of the Wake-Up Effect in Ferroelectric HZO Thin Films

Ist Teil von

• ACS applied electronic materials, 2019-09, Vol.1 (9), p.1740-1745

Ort / Verlag

American Chemical Society

Erscheinungsjahr

2019

Link zum Volltext

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• The wake-up effect is a major issue for ferroelectric HfO2-based memory devices. Here, two TiN/HZO/TiN structures deposited by magnetron sputtering on silicon are compared. The maximum remanant polarization is higher than 21 μC/cm2 for both samples, but a strong difference is observed in the electrical behavior. For the mesa sample, the difference between the maximum and initial remanent polarization is only 3 μC/cm2, whereas it is around 14 μC/cm2 in the non-mesa case. We discuss the root causes of these behaviors in light of GIXRD results.